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Normally-off GaN-on-Si metal-insulator-semiconductor field-effect transistor with 600-V blocking capability at 200°C
Rongming Chu, David Brown, Daniel Zehnder, Xu Chen, Adam Williams, Ray Li, Mary Chen, Scott Newell, Karim Boutros
Research output: Chapter in Book/Report/Conference proceeding › Conference contribution
18
Scopus
citations