Normally-off GaN-on-Si metal-insulator-semiconductor field-effect transistor with 600-V blocking capability at 200°C
- Rongming Chu
- , David Brown
- , Daniel Zehnder
- , Xu Chen
- , Adam Williams
- , Ray Li
- , Mary Chen
- , Scott Newell
- , Karim Boutros
Research output: Chapter in Book/Report/Conference proceeding › Conference contribution
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