Normally-Off GaN-on-Si transistors enabling nanosecond power switching at one kilowatt

Rongming Chu; Brian Hughes; Mary Chen; David Brown; Ray Li; Sameh Khalil; Daniel Zehnder; Steve Chen; Adam Williams; Austin Garrido; Marcel Musni; Karim Boutros

doi:10.1109/DRC.2013.6633862

Normally-Off GaN-on-Si transistors enabling nanosecond power switching at one kilowatt

Rongming Chu
, Brian Hughes
, Mary Chen
, David Brown
, Ray Li
, Sameh Khalil
, Daniel Zehnder
, Steve Chen
, Adam Williams
, Austin Garrido
, Marcel Musni
, Karim Boutros

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Original language	English (US)
Title of host publication	71st Device Research Conference, DRC 2013 - Conference Digest
Pages	199-200
Number of pages	2
DOIs	https://doi.org/10.1109/DRC.2013.6633862
State	Published - 2013
Event	71st Device Research Conference, DRC 2013 - Notre Dame, IN, United States Duration: Jun 23 2013 → Jun 26 2013

Publication series

Name	Device Research Conference - Conference Digest, DRC
ISSN (Print)	1548-3770

Other

Other	71st Device Research Conference, DRC 2013
Country/Territory	United States
City	Notre Dame, IN
Period	6/23/13 → 6/26/13

All Science Journal Classification (ASJC) codes

Electrical and Electronic Engineering

Access to Document

10.1109/DRC.2013.6633862

Cite this

Chu, R., Hughes, B., Chen, M., Brown, D., Li, R., Khalil, S., Zehnder, D., Chen, S., Williams, A., Garrido, A., Musni, M., & Boutros, K. (2013). Normally-Off GaN-on-Si transistors enabling nanosecond power switching at one kilowatt. In 71st Device Research Conference, DRC 2013 - Conference Digest (pp. 199-200). Article 6633862 (Device Research Conference - Conference Digest, DRC). https://doi.org/10.1109/DRC.2013.6633862

@inproceedings{be43f68285c04dc4a89bf7f8341a9053,

title = "Normally-Off GaN-on-Si transistors enabling nanosecond power switching at one kilowatt",

author = "Rongming Chu and Brian Hughes and Mary Chen and David Brown and Ray Li and Sameh Khalil and Daniel Zehnder and Steve Chen and Adam Williams and Austin Garrido and Marcel Musni and Karim Boutros",

year = "2013",

doi = "10.1109/DRC.2013.6633862",

language = "English (US)",

isbn = "9781479908110",

series = "Device Research Conference - Conference Digest, DRC",

pages = "199--200",

booktitle = "71st Device Research Conference, DRC 2013 - Conference Digest",

note = "71st Device Research Conference, DRC 2013 ; Conference date: 23-06-2013 Through 26-06-2013",

}

Chu, R, Hughes, B, Chen, M, Brown, D, Li, R, Khalil, S, Zehnder, D, Chen, S, Williams, A, Garrido, A, Musni, M & Boutros, K 2013, Normally-Off GaN-on-Si transistors enabling nanosecond power switching at one kilowatt. in 71st Device Research Conference, DRC 2013 - Conference Digest., 6633862, Device Research Conference - Conference Digest, DRC, pp. 199-200, 71st Device Research Conference, DRC 2013, Notre Dame, IN, United States, 6/23/13. https://doi.org/10.1109/DRC.2013.6633862

TY - GEN

T1 - Normally-Off GaN-on-Si transistors enabling nanosecond power switching at one kilowatt

AU - Chu, Rongming

AU - Hughes, Brian

AU - Chen, Mary

AU - Brown, David

AU - Li, Ray

AU - Khalil, Sameh

AU - Zehnder, Daniel

AU - Chen, Steve

AU - Williams, Adam

AU - Garrido, Austin

AU - Musni, Marcel

AU - Boutros, Karim

PY - 2013

Y1 - 2013

UR - https://www.scopus.com/pages/publications/84890074434

UR - https://www.scopus.com/pages/publications/84890074434#tab=citedBy

U2 - 10.1109/DRC.2013.6633862

DO - 10.1109/DRC.2013.6633862

M3 - Conference contribution

AN - SCOPUS:84890074434

SN - 9781479908110

T3 - Device Research Conference - Conference Digest, DRC

SP - 199

EP - 200

BT - 71st Device Research Conference, DRC 2013 - Conference Digest

T2 - 71st Device Research Conference, DRC 2013

Y2 - 23 June 2013 through 26 June 2013

ER -

Normally-Off GaN-on-Si transistors enabling nanosecond power switching at one kilowatt

Publication series

Other

All Science Journal Classification (ASJC) codes

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