TY - GEN
T1 - Normally-off GaN switching 400V in 1.4ns using an ultra-low resistance and inductance gate drive
AU - Hughes, Brian
AU - Chu, Rongming
AU - Lazar, James
AU - Hulsey, Stephen
AU - Garrido, Austin
AU - Zehnder, Daniel
AU - Musni, Marcel
AU - Boutros, Karim
PY - 2013
Y1 - 2013
N2 - A turn-on time of 1.4ns is measured in a normally-off GaN synchronous boost converter switching 400V. The high-speed performance is achieved by significantly improving the GaN switches, packaging and gate drive. A recently developed normally-off, AlN-based insulating-gate, AlGaN/GaN-on-Si HFET operates with a high gate voltage of 6V [1]. The higher gate voltage increases gate current for faster switching. A Multi-Chip-Module (MCM) allows paralleling GaN switch up to 20Arms with low parasitic inductance of ∼ 3.6nH in the power loop. The gate drive uses 50m bare MOSFETs integrated onto the MCM to significantly reduce gate driver inductance to 1nH. The very fast switching results in large drain undershoot of 200V, and gate overshoot of more than 6V. Increasing the gate turn-on resistance to 1.4 eliminates gate voltage overshoot and reduces drain voltage overshoot to ∼20V, at the cost of an increased turn-on time of 3ns.
AB - A turn-on time of 1.4ns is measured in a normally-off GaN synchronous boost converter switching 400V. The high-speed performance is achieved by significantly improving the GaN switches, packaging and gate drive. A recently developed normally-off, AlN-based insulating-gate, AlGaN/GaN-on-Si HFET operates with a high gate voltage of 6V [1]. The higher gate voltage increases gate current for faster switching. A Multi-Chip-Module (MCM) allows paralleling GaN switch up to 20Arms with low parasitic inductance of ∼ 3.6nH in the power loop. The gate drive uses 50m bare MOSFETs integrated onto the MCM to significantly reduce gate driver inductance to 1nH. The very fast switching results in large drain undershoot of 200V, and gate overshoot of more than 6V. Increasing the gate turn-on resistance to 1.4 eliminates gate voltage overshoot and reduces drain voltage overshoot to ∼20V, at the cost of an increased turn-on time of 3ns.
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U2 - 10.1109/WiPDA.2013.6695566
DO - 10.1109/WiPDA.2013.6695566
M3 - Conference contribution
AN - SCOPUS:84893545867
SN - 9781479911943
T3 - 1st IEEE Workshop on Wide Bandgap Power Devices and Applications, WiPDA 2013 - Proceedings
SP - 76
EP - 79
BT - 1st IEEE Workshop on Wide Bandgap Power Devices and Applications, WiPDA 2013 - Proceedings
T2 - 1st IEEE Workshop on Wide Bandgap Power Devices and Applications, WiPDA 2013
Y2 - 27 October 2013 through 29 October 2013
ER -