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Normally-off gate-recessed AlGaN/GaN-on-Si hybrid MOS-HFET with Al 2O3 gate dielectric

  • A. L. Corrion
  • , M. Chen
  • , R. Chu
  • , S. D. Burnham
  • , S. Khalil
  • , D. Zehnder
  • , B. Hughes
  • , K. Boutros

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

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