Novel magnetic burn-in for retention and magnetic tolerance testing of STTRAM

Mohammad Nasim Imtiaz Khan, Anirudh S. Iyengar, Swaroop Ghosh

Research output: Contribution to journalArticlepeer-review

6 Scopus citations


Spin-transfer torque RAM (STTRAM) is considered as one of the most promising candidates among the emerging memory technologies. However, it brings new test challenges such as characterizing retention time and magnetic tolerance. STTRAM retention time needs to range from few seconds to years depending on its application. This is further aggravated by a significant shift in retention time under static (process variation) and dynamic (voltage, temperature fluctuation) variations. Conventional test-flows lack the capability to characterize STTRAM retention time while maintaining a reasonable test time. We propose the magnetic burn-in (MBI) test, which can be incorporated in the existing test flow with minimal changes to enable STTRAM retention testing with shorter test times (3.71× 1013X reduction with 220 Oe at 25 °C). MBI is also combined with standard thermal burn-in (MBI+BI) for further compression of retention time and test time (1.97× 1014X reduction with 220 Oe at 125 °C). We also propose MBI to certify the magnetic tolerance of STTRAM bits during write/read/retention modes with minimal changes in the existing test flow. For the STTRAM employed in this paper, we have found 86, 370, and 319 Oe to be the write, the read, and the retention tolerance, respectively.

Original languageEnglish (US)
Pages (from-to)1508-1517
Number of pages10
JournalIEEE Transactions on Very Large Scale Integration (VLSI) Systems
Issue number8
StatePublished - Aug 2018

All Science Journal Classification (ASJC) codes

  • Software
  • Hardware and Architecture
  • Electrical and Electronic Engineering


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