Novel magnetic burn-in for retention testing of STTRAM

Mohammad Nasim Imtiaz Khan, Anirudh S. Iyengar, Swaroop Ghosh

Research output: Chapter in Book/Report/Conference proceedingConference contribution

9 Scopus citations

Abstract

Spin-Transfer Torque RAM (STTRAM) is an emerging Non-Volatile Memory (NVM) technology that has drawn significant attention due to complete elimination of bitcell leakage. However, it brings new challenges in characterizing the retention time of the array during test. Significant shift of retention time under static (process variation (PV)) and dynamic (voltage, temperature fluctuation) variability furthers this issue. In this paper, we propose a novel magnetic burn-in (MBI) test which can be implemented with minimal changes in the existing test flow to enable STTRAM retention testing at short test time. The magnetic burn-in is also combined with thermal burn-in (MBI-BI) for further compression of retention and test time. Simulation results indicate MBI with 220Oe (at 25C) can improve the test time by 3.71×1013 X while MBI-BI with 220Oe at 125C can improve the test time by 1.97×1014X.

Original languageEnglish (US)
Title of host publicationProceedings of the 2017 Design, Automation and Test in Europe, DATE 2017
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages666-669
Number of pages4
ISBN (Electronic)9783981537093
DOIs
StatePublished - May 11 2017
Event20th Design, Automation and Test in Europe, DATE 2017 - Swisstech, Lausanne, Switzerland
Duration: Mar 27 2017Mar 31 2017

Publication series

NameProceedings of the 2017 Design, Automation and Test in Europe, DATE 2017

Other

Other20th Design, Automation and Test in Europe, DATE 2017
Country/TerritorySwitzerland
CitySwisstech, Lausanne
Period3/27/173/31/17

All Science Journal Classification (ASJC) codes

  • Computer Networks and Communications
  • Hardware and Architecture
  • Safety, Risk, Reliability and Quality

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