TY - GEN
T1 - Novel magnetic burn-in for retention testing of STTRAM
AU - Khan, Mohammad Nasim Imtiaz
AU - Iyengar, Anirudh S.
AU - Ghosh, Swaroop
N1 - Publisher Copyright:
© 2017 IEEE.
PY - 2017/5/11
Y1 - 2017/5/11
N2 - Spin-Transfer Torque RAM (STTRAM) is an emerging Non-Volatile Memory (NVM) technology that has drawn significant attention due to complete elimination of bitcell leakage. However, it brings new challenges in characterizing the retention time of the array during test. Significant shift of retention time under static (process variation (PV)) and dynamic (voltage, temperature fluctuation) variability furthers this issue. In this paper, we propose a novel magnetic burn-in (MBI) test which can be implemented with minimal changes in the existing test flow to enable STTRAM retention testing at short test time. The magnetic burn-in is also combined with thermal burn-in (MBI-BI) for further compression of retention and test time. Simulation results indicate MBI with 220Oe (at 25C) can improve the test time by 3.71×1013 X while MBI-BI with 220Oe at 125C can improve the test time by 1.97×1014X.
AB - Spin-Transfer Torque RAM (STTRAM) is an emerging Non-Volatile Memory (NVM) technology that has drawn significant attention due to complete elimination of bitcell leakage. However, it brings new challenges in characterizing the retention time of the array during test. Significant shift of retention time under static (process variation (PV)) and dynamic (voltage, temperature fluctuation) variability furthers this issue. In this paper, we propose a novel magnetic burn-in (MBI) test which can be implemented with minimal changes in the existing test flow to enable STTRAM retention testing at short test time. The magnetic burn-in is also combined with thermal burn-in (MBI-BI) for further compression of retention and test time. Simulation results indicate MBI with 220Oe (at 25C) can improve the test time by 3.71×1013 X while MBI-BI with 220Oe at 125C can improve the test time by 1.97×1014X.
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U2 - 10.23919/DATE.2017.7927073
DO - 10.23919/DATE.2017.7927073
M3 - Conference contribution
AN - SCOPUS:85020206368
T3 - Proceedings of the 2017 Design, Automation and Test in Europe, DATE 2017
SP - 666
EP - 669
BT - Proceedings of the 2017 Design, Automation and Test in Europe, DATE 2017
PB - Institute of Electrical and Electronics Engineers Inc.
T2 - 20th Design, Automation and Test in Europe, DATE 2017
Y2 - 27 March 2017 through 31 March 2017
ER -