T. N. Jackson, N. A. Masnari

Research output: Contribution to conferencePaperpeer-review

9 Scopus citations


This technique has produced linewidths as small as 0. 04 mu m and can be applied to the fabrication of a variety of microwave devices. In particular, it has been used to produce GaAs MESFETs with goldplated chromium gates as short as 0. 1 mu m. The performance of GaAs MESFETs produced in this manner is comparable to that of devices fabricated using more complex and expensive gate patterning techniques. For example, MESFETs on ion-implanted GaAS with 5 mu m source-drain spacings, 0. 3 mu m gate lengths, available gains of over 10 dB at a frequency of 12 GHz.

Original languageEnglish (US)
Number of pages4
StatePublished - 1979
EventInt Electron Devices Meet, 25th, Tech Dig - Washington, DC, USA
Duration: Dec 3 1979Dec 5 1979


OtherInt Electron Devices Meet, 25th, Tech Dig
CityWashington, DC, USA

All Science Journal Classification (ASJC) codes

  • General Chemistry


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