NOVEL SUBMICRON FABRICATION TECHNIQUE.

T. N. Jackson; N. A. Masnari

NOVEL SUBMICRON FABRICATION TECHNIQUE.

T. N. Jackson
, N. A. Masnari

Research output: Contribution to conference › Paper › peer-review

Abstract

This technique has produced linewidths as small as 0. 04 mu m and can be applied to the fabrication of a variety of microwave devices. In particular, it has been used to produce GaAs MESFETs with goldplated chromium gates as short as 0. 1 mu m. The performance of GaAs MESFETs produced in this manner is comparable to that of devices fabricated using more complex and expensive gate patterning techniques. For example, MESFETs on ion-implanted GaAS with 5 mu m source-drain spacings, 0. 3 mu m gate lengths, available gains of over 10 dB at a frequency of 12 GHz.

Original language	English (US)
Pages	58-61
Number of pages	4
State	Published - 1979
Event	Int Electron Devices Meet, 25th, Tech Dig - Washington, DC, USA Duration: Dec 3 1979 → Dec 5 1979

Other

Other	Int Electron Devices Meet, 25th, Tech Dig
City	Washington, DC, USA
Period	12/3/79 → 12/5/79

All Science Journal Classification (ASJC) codes

General Chemistry

Cite this

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title = "NOVEL SUBMICRON FABRICATION TECHNIQUE.",

abstract = "This technique has produced linewidths as small as 0. 04 mu m and can be applied to the fabrication of a variety of microwave devices. In particular, it has been used to produce GaAs MESFETs with goldplated chromium gates as short as 0. 1 mu m. The performance of GaAs MESFETs produced in this manner is comparable to that of devices fabricated using more complex and expensive gate patterning techniques. For example, MESFETs on ion-implanted GaAS with 5 mu m source-drain spacings, 0. 3 mu m gate lengths, available gains of over 10 dB at a frequency of 12 GHz.",

author = "Jackson, \{T. N.\} and Masnari, \{N. A.\}",

year = "1979",

language = "English (US)",

pages = "58--61",

note = "Int Electron Devices Meet, 25th, Tech Dig ; Conference date: 03-12-1979 Through 05-12-1979",

}

TY - CONF

T1 - NOVEL SUBMICRON FABRICATION TECHNIQUE.

AU - Jackson, T. N.

AU - Masnari, N. A.

PY - 1979

Y1 - 1979

N2 - This technique has produced linewidths as small as 0. 04 mu m and can be applied to the fabrication of a variety of microwave devices. In particular, it has been used to produce GaAs MESFETs with goldplated chromium gates as short as 0. 1 mu m. The performance of GaAs MESFETs produced in this manner is comparable to that of devices fabricated using more complex and expensive gate patterning techniques. For example, MESFETs on ion-implanted GaAS with 5 mu m source-drain spacings, 0. 3 mu m gate lengths, available gains of over 10 dB at a frequency of 12 GHz.

AB - This technique has produced linewidths as small as 0. 04 mu m and can be applied to the fabrication of a variety of microwave devices. In particular, it has been used to produce GaAs MESFETs with goldplated chromium gates as short as 0. 1 mu m. The performance of GaAs MESFETs produced in this manner is comparable to that of devices fabricated using more complex and expensive gate patterning techniques. For example, MESFETs on ion-implanted GaAS with 5 mu m source-drain spacings, 0. 3 mu m gate lengths, available gains of over 10 dB at a frequency of 12 GHz.

UR - https://www.scopus.com/pages/publications/0018682755

UR - https://www.scopus.com/pages/publications/0018682755#tab=citedBy

M3 - Paper

AN - SCOPUS:0018682755

SP - 58

EP - 61

T2 - Int Electron Devices Meet, 25th, Tech Dig

Y2 - 3 December 1979 through 5 December 1979

ER -

NOVEL SUBMICRON FABRICATION TECHNIQUE.

Abstract

Other

All Science Journal Classification (ASJC) codes

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