Nucleation and growth of GaSe on GaAs by Van der Waal epitaxy

Keyphrases

• Gallium Arsenide 100%
• GaSe 100%
• Islanding 33%
• Reflection High-energy Electron Diffraction 16%
• Substrate Temperature 16%
• Step Edge 16%
• Diffusion Barrier 16%
• Orientation Relationship 16%
• Surface Kinetics 16%
• Heteroepitaxial Structures 16%
• Homoepitaxial 16%
• Well-aligned 16%
• Systems Change 16%
• Uniform Layer 16%
• Monolayer Coverage 16%
• Island Shape 16%
• Layer-by-layer Growth 16%

Material Science

• Epitaxy 100%
• Nucleation 100%
• Gallium Arsenide 100%
• Monolayers 33%
• Reflection High-Energy Electron Diffraction 33%
• High-Resolution Episcopic Microscopy 33%

Engineering

• Gallium Arsenide 100%
• Monolayer 33%
• Diffusion Barrier 33%
• Surface Kinetics 33%
• Substrate Temperature 33%