Abstract
We demonstrate that at least two varieties of E' defect precursors exist in a wide variety of conventionally processed thermal SiO2 thin films. We provisionally label the defects EP and E'γp. We find that EP defect capture cross sections exceed the corresponding E 'γp values by an order of magnitude, that EP centers are distributed far more broadly throughout the oxides than are the E 'γp defects, and that the EP resonance, unlike the E'γp resonance is not stable at room temperature.
Original language | English (US) |
---|---|
Pages (from-to) | 2281-2283 |
Number of pages | 3 |
Journal | Applied Physics Letters |
Volume | 65 |
Issue number | 18 |
DOIs | |
State | Published - 1994 |
All Science Journal Classification (ASJC) codes
- Physics and Astronomy (miscellaneous)