Observation of a new type of plasma etching damage: Damage to N-channel transistors arising from inductive metal loops

Keyphrases

• Plasma Etching 100%
• Metal Loop 100%
• N-channel Transistors 100%
• Etching Damage 100%
• MOSFET 66%
• Gate Oxide 66%
• Oxides 33%
• Silicon Wafer 33%
• Reactive Ion Etching 33%
• Electrical Stress 33%
• Damage Classification 33%
• N-channel 33%
• Channel Length 33%
• RF Power 33%
• Electromotive Force 33%
• Boron Trichloride 33%
• P-silicon 33%
• Lightly Doped Drain 33%
• Metal Plasma 33%
• Transistor 33%

Engineering

• Gate Oxide 100%
• Channel Transistor 100%
• Metal-Oxide-Semiconductor Field Effect Transistor (Mosfets) 100%
• Induced Damage 50%
• Silicon Wafer 50%
• Channel Length 50%
• Si Interface 50%
• Electromotive Force 50%
• Transistor 50%

Material Science

• Oxide Compound 100%
• Transistor 100%
• Plasma Etching 100%
• Metal-Oxide-Semiconductor Field-Effect Transistor 66%
• Silicon Wafer 33%
• Reactive Ion Etching 33%