Observation of a two-dimensional electron gas in modulation-doped ZnTe/CdSe quantum wells

I. P. Smorchkova; N. Samarth

doi:10.1063/1.121590

Observation of a two-dimensional electron gas in modulation-doped ZnTe/CdSe quantum wells

I. P. Smorchkova, N. Samarth

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Abstract

We demonstrate the formation of a two-dimensional electron gas in lattice-matched, modulation-doped ZnTe/CdSe quantum well structures. Despite the well-known difficulty in n doping the II-VI semiconductor ZnTe, we find that the unusual type-II band alignment between ZnTe and CdSe allows the efficient transfer of free carriers from n-ZnTe into a CdSe quantum well since the deep donor levels in the n-ZnTe barrier lie above the confined ground state in the CdSe well. The sizeable well depth (∼1.35eV) enables the fabrication of two-dimensional electron gases with sheet concentrations up to ∼6×10¹²cm^-2, and with a low-temperature mobility up to 1.4×10⁴cm²/Vs.

Original language	English (US)
Pages (from-to)	3193-3195
Number of pages	3
Journal	Applied Physics Letters
Volume	72
Issue number	24
DOIs	https://doi.org/10.1063/1.121590
State	Published - 1998

All Science Journal Classification (ASJC) codes

Physics and Astronomy (miscellaneous)

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10.1063/1.121590

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title = "Observation of a two-dimensional electron gas in modulation-doped ZnTe/CdSe quantum wells",

abstract = "We demonstrate the formation of a two-dimensional electron gas in lattice-matched, modulation-doped ZnTe/CdSe quantum well structures. Despite the well-known difficulty in n doping the II-VI semiconductor ZnTe, we find that the unusual type-II band alignment between ZnTe and CdSe allows the efficient transfer of free carriers from n-ZnTe into a CdSe quantum well since the deep donor levels in the n-ZnTe barrier lie above the confined ground state in the CdSe well. The sizeable well depth (∼1.35eV) enables the fabrication of two-dimensional electron gases with sheet concentrations up to ∼6×1012cm-2, and with a low-temperature mobility up to 1.4×104cm2/Vs.",

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year = "1998",

doi = "10.1063/1.121590",

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T1 - Observation of a two-dimensional electron gas in modulation-doped ZnTe/CdSe quantum wells

AU - Smorchkova, I. P.

AU - Samarth, N.

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N2 - We demonstrate the formation of a two-dimensional electron gas in lattice-matched, modulation-doped ZnTe/CdSe quantum well structures. Despite the well-known difficulty in n doping the II-VI semiconductor ZnTe, we find that the unusual type-II band alignment between ZnTe and CdSe allows the efficient transfer of free carriers from n-ZnTe into a CdSe quantum well since the deep donor levels in the n-ZnTe barrier lie above the confined ground state in the CdSe well. The sizeable well depth (∼1.35eV) enables the fabrication of two-dimensional electron gases with sheet concentrations up to ∼6×1012cm-2, and with a low-temperature mobility up to 1.4×104cm2/Vs.

AB - We demonstrate the formation of a two-dimensional electron gas in lattice-matched, modulation-doped ZnTe/CdSe quantum well structures. Despite the well-known difficulty in n doping the II-VI semiconductor ZnTe, we find that the unusual type-II band alignment between ZnTe and CdSe allows the efficient transfer of free carriers from n-ZnTe into a CdSe quantum well since the deep donor levels in the n-ZnTe barrier lie above the confined ground state in the CdSe well. The sizeable well depth (∼1.35eV) enables the fabrication of two-dimensional electron gases with sheet concentrations up to ∼6×1012cm-2, and with a low-temperature mobility up to 1.4×104cm2/Vs.

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Observation of a two-dimensional electron gas in modulation-doped ZnTe/CdSe quantum wells

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