@inproceedings{96560b78ea0b47fc9a8371f0f5aa8866,
title = "Observation of deep level centers in 4H and 6H silicon carbide metal oxide semiconductor field effect transistors",
abstract = "Utilizing an very sensitive electron spin resonance (ESR) technique, spin dependent recombination (SDR) we have identified interface and near interface trapping centers in 4H and 6H SiC/SiO2 metal oxide semiconductor field effect transistors (MOSFETs). We extend our group's earlier observations on 6H devices to the more technologically important 4H system and find that several centers can play important roles in limiting the performance of SiC based MOSFETs.",
author = "Meyer, {David J.} and Dautrich, {Morgen S.} and Lenahan, {Patrick M.} and Aivars Lelis",
year = "2005",
doi = "10.4028/0-87849-963-6.593",
language = "English (US)",
isbn = "0878499636",
series = "Materials Science Forum",
publisher = "Trans Tech Publications Ltd",
pages = "593--596",
booktitle = "Silicon Carbide and Related Materials 2004, ECSCRM 2004 - Proceedings of 5th European Conference on Silicon Carbide and Related Materials",
note = "5th European Conference on Silicon Carbide and Related Materials, ECRSCRM2004 ; Conference date: 31-08-2004 Through 04-09-2004",
}