@inproceedings{216c0d2ef1af49d5a509227f18940884,
title = "Observation of deep-level centers in 4H-silicon carbide metal oxide semiconductor field effect transistors by spin dependent recombination",
abstract = "In this study we report on spin-dependent recombination-detected electron spin resonance of interface/near interface defects in 4H-SiC metal oxide semiconductor field effect transistors with thermally grown SiO2 gate stacks. We demonstrate a distribution of performance-limiting defects which extends beyond the SiC/SiO2 boundary into the SiC bulk. Our results strongly indicate that the defects are intrinsic and we tentatively identify them as silicon vacancy-like centers on the basis of strong, but imprecisely-resolved, 29Si hyperfine sidepeaks in the magnetic resonance spectrum.",
author = "Dautrich, {Morgen S.} and Lenahan, {Patrick M.} and Lelis, {Aivars J.}",
year = "2006",
doi = "10.4028/0-87849-425-1.1011",
language = "English (US)",
isbn = "9780878494255",
series = "Materials Science Forum",
publisher = "Trans Tech Publications Ltd",
number = "PART 2",
pages = "1011--1014",
booktitle = "Silicon Carbide and Related Materials - 2005, - Proceedings of the International Conference on Silicon Carbide and Related Materials -2005",
edition = "PART 2",
note = "International Conference on Silicon Carbide and Related Materials 2005, (ICSCRM 2005) ; Conference date: 18-09-2005 Through 23-09-2005",
}