Observation of electroluminescence and 'soft-breakdown' effects in sub-0.5μm CMOS with ultrathin gate oxides

M. Okandan; S. J. Fonash; O. O. Awadelkarim; Y. D. Chan

Observation of electroluminescence and 'soft-breakdown' effects in sub-0.5μm CMOS with ultrathin gate oxides

M. Okandan, S. J. Fonash, O. O. Awadelkarim, Y. D. Chan

Research output: Contribution to conference › Paper › peer-review

Abstract

Luminescence from reverse biased pn junctions and gate regions of MOSFETs is well known. However, there are four new aspects to the light emission observed in this study from the MOSFET gate areas: (1) the devices used were sub half micron geometry NMOS and PMOS transistors with oxide thicknesses in the range of 45 to 135 angstrom, (2) light emission is observed at the poly gate-birds beak edge, (3) only devices that had antennas designed for the contact etch step and were processed in a high density plasma etch system exhibit this luminescence, and (4) the presence of non-destructive luminescence correlates with the presence of oxide 'soft-breakdown'. The transistors used in this study were LDD CMOS fabricated on 8 in. epi wafers.

Original language	English (US)
Pages	168-170
Number of pages	3
State	Published - 1996
Event	Proceedings of the 1996 1st International Symposium on Plasma Process-Induced Damage, P2ID - Santa Clara, CA, USA Duration: May 13 1996 → May 14 1996

Other

Other	Proceedings of the 1996 1st International Symposium on Plasma Process-Induced Damage, P2ID
City	Santa Clara, CA, USA
Period	5/13/96 → 5/14/96

All Science Journal Classification (ASJC) codes

General Engineering

Cite this

@conference{ae0c800f796948eba27334e844fb7d93,

title = "Observation of electroluminescence and 'soft-breakdown' effects in sub-0.5μm CMOS with ultrathin gate oxides",

abstract = "Luminescence from reverse biased pn junctions and gate regions of MOSFETs is well known. However, there are four new aspects to the light emission observed in this study from the MOSFET gate areas: (1) the devices used were sub half micron geometry NMOS and PMOS transistors with oxide thicknesses in the range of 45 to 135 angstrom, (2) light emission is observed at the poly gate-birds beak edge, (3) only devices that had antennas designed for the contact etch step and were processed in a high density plasma etch system exhibit this luminescence, and (4) the presence of non-destructive luminescence correlates with the presence of oxide 'soft-breakdown'. The transistors used in this study were LDD CMOS fabricated on 8 in. epi wafers.",

author = "M. Okandan and Fonash, {S. J.} and Awadelkarim, {O. O.} and Chan, {Y. D.}",

year = "1996",

language = "English (US)",

pages = "168--170",

note = "Proceedings of the 1996 1st International Symposium on Plasma Process-Induced Damage, P2ID ; Conference date: 13-05-1996 Through 14-05-1996",

}

Observation of electroluminescence and 'soft-breakdown' effects in sub-0.5μm CMOS with ultrathin gate oxides. / Okandan, M.; Fonash, S. J.; Awadelkarim, O. O. et al.
1996. 168-170 Paper presented at Proceedings of the 1996 1st International Symposium on Plasma Process-Induced Damage, P2ID, Santa Clara, CA, USA.

Research output: Contribution to conference › Paper › peer-review

TY - CONF

T1 - Observation of electroluminescence and 'soft-breakdown' effects in sub-0.5μm CMOS with ultrathin gate oxides

AU - Okandan, M.

AU - Fonash, S. J.

AU - Awadelkarim, O. O.

AU - Chan, Y. D.

PY - 1996

Y1 - 1996

N2 - Luminescence from reverse biased pn junctions and gate regions of MOSFETs is well known. However, there are four new aspects to the light emission observed in this study from the MOSFET gate areas: (1) the devices used were sub half micron geometry NMOS and PMOS transistors with oxide thicknesses in the range of 45 to 135 angstrom, (2) light emission is observed at the poly gate-birds beak edge, (3) only devices that had antennas designed for the contact etch step and were processed in a high density plasma etch system exhibit this luminescence, and (4) the presence of non-destructive luminescence correlates with the presence of oxide 'soft-breakdown'. The transistors used in this study were LDD CMOS fabricated on 8 in. epi wafers.

AB - Luminescence from reverse biased pn junctions and gate regions of MOSFETs is well known. However, there are four new aspects to the light emission observed in this study from the MOSFET gate areas: (1) the devices used were sub half micron geometry NMOS and PMOS transistors with oxide thicknesses in the range of 45 to 135 angstrom, (2) light emission is observed at the poly gate-birds beak edge, (3) only devices that had antennas designed for the contact etch step and were processed in a high density plasma etch system exhibit this luminescence, and (4) the presence of non-destructive luminescence correlates with the presence of oxide 'soft-breakdown'. The transistors used in this study were LDD CMOS fabricated on 8 in. epi wafers.

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M3 - Paper

AN - SCOPUS:0029722234

SP - 168

EP - 170

T2 - Proceedings of the 1996 1st International Symposium on Plasma Process-Induced Damage, P2ID

Y2 - 13 May 1996 through 14 May 1996

ER -

Observation of electroluminescence and 'soft-breakdown' effects in sub-0.5μm CMOS with ultrathin gate oxides

Abstract

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