Observation of negative bias stressing interface trapping centers in metal gate hafnium oxide field effect transistors using spin dependent recombination
C. J. Cochrane, P. M. Lenahan, J. P. Campbell, G. Bersuker, A. Neugroschel
Dive into the research topics of 'Observation of negative bias stressing interface trapping centers in metal gate hafnium oxide field effect transistors using spin dependent recombination'. Together they form a unique fingerprint.