Observation of quasibound states in semiconductor single quantum barriers

H. Luo, N. Dai, F. C. Zhang, N. Samarth, M. Dobrowolska, J. K. Furdyna, C. Parks, A. K. Ramdas

Research output: Contribution to journalArticlepeer-review

47 Scopus citations


We report the observation of quasibound states in single semiconductor barriers, in heterostructures with both type-I and type-II band alignments. We disucss the localization and the shape of wave functions of such states, as well as their density of states. In structures with type-II band alignment (CdSeZnTe and CdMnSe/ZnTe) we observe transitions involving electrons confined in the conduction band well and quasibound holes localized in the valence band barrier (both in the CdSe layer). In the system with type-I band alignment (ZnMnSe/ZnSe) transitions between states quasibound in the single ZnMnSe barrier also show clear absorption peaks.

Original languageEnglish (US)
Pages (from-to)1307-1310
Number of pages4
JournalPhysical review letters
Issue number9
StatePublished - 1993

All Science Journal Classification (ASJC) codes

  • General Physics and Astronomy


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