Observation of reduced 1/f noise in graphene field effect transistors on boron nitride substrates

Morteza Kayyalha, Yong P. Chen

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We have investigated the low frequency (f) flicker (also called 1/f) noise of single-layer graphene devices on h-BN (placed on SiO2/Si) along with those on SiO2/Si. We observe that the devices fabricated on h-BN have on average one order of magnitude lower noise amplitude compared with devices fabricated on SiO2/Si despite having comparable mobilities at room temperature. We associate this noise reduction to the lower densities of impurities and trap sites in h-BN than in SiO2. Furthermore, the gate voltage dependent noise amplitude shows a broad maximum at Dirac point for devices on h-BN, in contrast to the M-shaped behavior showing a minimum at Dirac point for devices on SiO2, consistent with the reduced charge inhomogeneity (puddles) for graphene on h-BN. This study demonstrates that the use of h-BN as a substrate or dielectric can be a simple and efficient noise reduction technique valuable for electronic applications of graphene and other nanomaterials.

Original languageEnglish (US)
Article number113101
JournalApplied Physics Letters
Issue number11
StatePublished - Sep 14 2015

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy (miscellaneous)


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