Observation of Strong Polarization Enhancement in Ferroelectric Tunnel Junctions

Linze Li, Xiaoxing Cheng, Thomas Blum, Huaixun Huyan, Yi Zhang, Colin Heikes, Xingxu Yan, Chaitanya Gadre, Toshihiro Aoki, Mingjie Xu, Lin Xie, Zijian Hong, Carolina Adamo, Darrell G. Schlom, Long Qing Chen, Xiaoqing Pan

Research output: Contribution to journalArticlepeer-review

15 Scopus citations


Ferroelectric heterostructures, with capability of storing data at ultrahigh densities, could act as the platform for next-generation memories. The development of new device paradigms has been hampered by the long-standing notion of inevitable ferroelectricity suppression under reduced dimensions. Despite recent experimental observation of stable polarized states in ferroelectric ultrathin films, the out-of-plane polarization components in these films are strongly attenuated compared to thicker films, implying a degradation of device performance in electronic miniaturization processes. Here, in a model system of BiFeO3/La0.7Sr0.3MnO3, we report observation of a dramatic out-of-plane polarization enhancement that occurs with decreasing film thickness. Our electron microscopy analysis coupled with phase-field simulations reveals a polarization-enhancement mechanism that is dominated by the accumulation of oxygen vacancies at interfacial layers. The results shed light on the interplay between polarization and defects in nanoscale ferroelectrics and suggest a route to enhance functionality in oxide devices.

Original languageEnglish (US)
Pages (from-to)6812-6818
Number of pages7
JournalNano letters
Issue number10
StatePublished - Oct 9 2019

All Science Journal Classification (ASJC) codes

  • Bioengineering
  • General Chemistry
  • General Materials Science
  • Condensed Matter Physics
  • Mechanical Engineering


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