Abstract
We utilize a highly sensitive electron spin resonance technique called spin-dependent recombination to observe deep level dangling bond centers at and very near the SiC SiO2 interface in fully processed n -channel 4H-SiC lateral metal-oxide-semiconductor field-effect transistors. The axially symmetric g tensor of the largest signal strongly suggests that the responsible defect is a dangling bond center with the dangling bond orbital pointing along the crystalline c axis.
Original language | English (US) |
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Article number | 023503 |
Pages (from-to) | 023503-1-023503-3 |
Journal | Applied Physics Letters |
Volume | 86 |
Issue number | 2 |
DOIs | |
State | Published - Jan 10 2005 |
All Science Journal Classification (ASJC) codes
- Physics and Astronomy (miscellaneous)