Observation of trapping defects in 4H -silicon carbide metal-oxide-semiconductor field-effect transistors by spin-dependent recombination

We utilize a highly sensitive electron spin resonance technique called spin-dependent recombination to observe deep level dangling bond centers at and very near the SiC SiO2 interface in fully processed n -channel 4H-SiC lateral metal-oxide-semiconductor field-effect transistors. The axially symmetric g tensor of the largest signal strongly suggests that the responsible defect is a dangling bond center with the dangling bond orbital pointing along the crystalline c axis.