Abstract
CdSe/Zn1-xMnxTe superlattices are characterized by type-II band alignment. We have used these structures to demonstrate that type-II superlattices can exhibit type-I excitons, i.e., excitons which are confined in the same semiconductor layer (either in CdSe or in Zn1-xMnxTe in the present example). Such spatially direct excitons form in a type-II structure when one of the carriers (electron or hole) originates from a well, while the other (hole or electron) originates from a state localized in the barrier, which is typical for subbands at above-barrier energies.
| Original language | English (US) |
|---|---|
| Pages (from-to) | 3806-3810 |
| Number of pages | 5 |
| Journal | Physical Review B |
| Volume | 47 |
| Issue number | 7 |
| DOIs | |
| State | Published - 1993 |
All Science Journal Classification (ASJC) codes
- Condensed Matter Physics