Observations of NBTI-induced atomic scale defects

J. P. Campbell; P. M. Lenahan; A. T. Krishnan; S. Krishnan

doi:10.1109/IRWS.2005.1609551

Observations of NBTI-induced atomic scale defects

J. P. Campbell, P. M. Lenahan, A. T. Krishnan, S. Krishnan

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

4 Scopus citations

Abstract

We utilize a combination of MOSFET gate-controlled diode DC-IV measurements and a very sensitive electron spin resonance technique called spin-dependent recombination to observe and identify defect centers generated by NBTI in fully processed SiO₂ -based pMOSFETs. In SiO₂ devices, the defects include two Si/SiO₂ interface silicon dangling bond centers (P_b0 and P_b1) and may also include an oxide silicon dangling bond center (E′). Our observations suggest that both P _b0 and P_b1 defects play major roles while the E′ defect plays a somewhat different role in the SiO₂ devices.

Original language	English (US)
Title of host publication	2005 IEEE International Integrated Reliability Workshop Final Report, IIRW 2005
Pages	1-4
Number of pages	4
DOIs	https://doi.org/10.1109/IRWS.2005.1609551
State	Published - 2005
Event	2005 IEEE International Integrated Reliability Workshop, IIRW 2005 - S. Lake Tahoe, CA, United States Duration: Oct 17 2005 → Oct 20 2005

Publication series

Name	IEEE International Integrated Reliability Workshop Final Report
Volume	2005

Other

Other	2005 IEEE International Integrated Reliability Workshop, IIRW 2005
Country/Territory	United States
City	S. Lake Tahoe, CA
Period	10/17/05 → 10/20/05

All Science Journal Classification (ASJC) codes

General Engineering

Access to Document

10.1109/IRWS.2005.1609551

Cite this

@inproceedings{d401bf69a9624503930e3707684a9daf,

title = "Observations of NBTI-induced atomic scale defects",

abstract = "We utilize a combination of MOSFET gate-controlled diode DC-IV measurements and a very sensitive electron spin resonance technique called spin-dependent recombination to observe and identify defect centers generated by NBTI in fully processed SiO2 -based pMOSFETs. In SiO2 devices, the defects include two Si/SiO2 interface silicon dangling bond centers (Pb0 and Pb1) and may also include an oxide silicon dangling bond center (E′). Our observations suggest that both P b0 and Pb1 defects play major roles while the E′ defect plays a somewhat different role in the SiO2 devices.",

author = "Campbell, {J. P.} and Lenahan, {P. M.} and Krishnan, {A. T.} and S. Krishnan",

year = "2005",

doi = "10.1109/IRWS.2005.1609551",

language = "English (US)",

isbn = "0780389921",

series = "IEEE International Integrated Reliability Workshop Final Report",

pages = "1--4",

booktitle = "2005 IEEE International Integrated Reliability Workshop Final Report, IIRW 2005",

note = "2005 IEEE International Integrated Reliability Workshop, IIRW 2005 ; Conference date: 17-10-2005 Through 20-10-2005",

}

Campbell, JP, Lenahan, PM, Krishnan, AT & Krishnan, S 2005, Observations of NBTI-induced atomic scale defects. in 2005 IEEE International Integrated Reliability Workshop Final Report, IIRW 2005., 1609551, IEEE International Integrated Reliability Workshop Final Report, vol. 2005, pp. 1-4, 2005 IEEE International Integrated Reliability Workshop, IIRW 2005, S. Lake Tahoe, CA, United States, 10/17/05. https://doi.org/10.1109/IRWS.2005.1609551

Observations of NBTI-induced atomic scale defects. / Campbell, J. P.; Lenahan, P. M.; Krishnan, A. T. et al.
2005 IEEE International Integrated Reliability Workshop Final Report, IIRW 2005. 2005. p. 1-4 1609551 (IEEE International Integrated Reliability Workshop Final Report; Vol. 2005).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

TY - GEN

T1 - Observations of NBTI-induced atomic scale defects

AU - Campbell, J. P.

AU - Lenahan, P. M.

AU - Krishnan, A. T.

AU - Krishnan, S.

PY - 2005

Y1 - 2005

N2 - We utilize a combination of MOSFET gate-controlled diode DC-IV measurements and a very sensitive electron spin resonance technique called spin-dependent recombination to observe and identify defect centers generated by NBTI in fully processed SiO2 -based pMOSFETs. In SiO2 devices, the defects include two Si/SiO2 interface silicon dangling bond centers (Pb0 and Pb1) and may also include an oxide silicon dangling bond center (E′). Our observations suggest that both P b0 and Pb1 defects play major roles while the E′ defect plays a somewhat different role in the SiO2 devices.

AB - We utilize a combination of MOSFET gate-controlled diode DC-IV measurements and a very sensitive electron spin resonance technique called spin-dependent recombination to observe and identify defect centers generated by NBTI in fully processed SiO2 -based pMOSFETs. In SiO2 devices, the defects include two Si/SiO2 interface silicon dangling bond centers (Pb0 and Pb1) and may also include an oxide silicon dangling bond center (E′). Our observations suggest that both P b0 and Pb1 defects play major roles while the E′ defect plays a somewhat different role in the SiO2 devices.

UR - http://www.scopus.com/inward/record.url?scp=33847726238&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=33847726238&partnerID=8YFLogxK

U2 - 10.1109/IRWS.2005.1609551

DO - 10.1109/IRWS.2005.1609551

M3 - Conference contribution

AN - SCOPUS:33847726238

SN - 0780389921

SN - 9780780389922

T3 - IEEE International Integrated Reliability Workshop Final Report

SP - 1

EP - 4

BT - 2005 IEEE International Integrated Reliability Workshop Final Report, IIRW 2005

T2 - 2005 IEEE International Integrated Reliability Workshop, IIRW 2005

Y2 - 17 October 2005 through 20 October 2005

ER -

Observations of NBTI-induced atomic scale defects

Abstract

Publication series

Other

All Science Journal Classification (ASJC) codes

Access to Document

Other files and links

Fingerprint

Cite this