Abstract
A combination of MOSFET gate-controlled diode measurements and a very sensitive electron spin resonance technique called spin-dependent recombination was utilized to observe and identify defect centers generated by a negative bias temperature stress in fully processed SiO 2-based pMOSFETs. In SiO 2 devices, the defects include two Si/SiO 2 interface silicon dangling bond centers (P b0 and P b1) and may also include an oxide silicon dangling bond center (E′). The observations indicate that both P b0 and P b1 defects play major roles in these SiO 2-based devices and suggest that E′ centers could play an important role.
Original language | English (US) |
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Article number | 1673698 |
Pages (from-to) | 117-122 |
Number of pages | 6 |
Journal | IEEE Transactions on Device and Materials Reliability |
Volume | 6 |
Issue number | 2 |
DOIs | |
State | Published - Jun 2006 |
All Science Journal Classification (ASJC) codes
- Electronic, Optical and Magnetic Materials
- Safety, Risk, Reliability and Quality
- Electrical and Electronic Engineering