Observations of NBTI-induced atomic-scale defects

Jason P. Campbell; Patrick M. Lenahan; Anand T. Krishnan; Srikanth Krishnan

doi:10.1109/TDMR.2006.876598

Observations of NBTI-induced atomic-scale defects

Jason P. Campbell
, Patrick M. Lenahan
, Anand T. Krishnan
, Srikanth Krishnan

Engineering Science and Mechanics

Research output: Contribution to journal › Article › peer-review

58 Scopus citations

Abstract

A combination of MOSFET gate-controlled diode measurements and a very sensitive electron spin resonance technique called spin-dependent recombination was utilized to observe and identify defect centers generated by a negative bias temperature stress in fully processed SiO ₂-based pMOSFETs. In SiO ₂ devices, the defects include two Si/SiO ₂ interface silicon dangling bond centers (P _b0 and P _b1) and may also include an oxide silicon dangling bond center (E′). The observations indicate that both P _b0 and P _b1 defects play major roles in these SiO ₂-based devices and suggest that E′ centers could play an important role.

Original language	English (US)
Article number	1673698
Pages (from-to)	117-122
Number of pages	6
Journal	IEEE Transactions on Device and Materials Reliability
Volume	6
Issue number	2
DOIs	https://doi.org/10.1109/TDMR.2006.876598
State	Published - Jun 2006

All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials
Safety, Risk, Reliability and Quality
Electrical and Electronic Engineering

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10.1109/TDMR.2006.876598

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title = "Observations of NBTI-induced atomic-scale defects",

abstract = "A combination of MOSFET gate-controlled diode measurements and a very sensitive electron spin resonance technique called spin-dependent recombination was utilized to observe and identify defect centers generated by a negative bias temperature stress in fully processed SiO 2-based pMOSFETs. In SiO 2 devices, the defects include two Si/SiO 2 interface silicon dangling bond centers (P b0 and P b1) and may also include an oxide silicon dangling bond center (E′). The observations indicate that both P b0 and P b1 defects play major roles in these SiO 2-based devices and suggest that E′ centers could play an important role.",

author = "Campbell, \{Jason P.\} and Lenahan, \{Patrick M.\} and Krishnan, \{Anand T.\} and Srikanth Krishnan",

note = "Funding Information: Manuscript received December 15, 2005; revised February 10, 2006. This work was supported by Texas Instruments Incorporated through the Semiconductor Research Corporation. J. P. Campbell and P. M. Lenahan are with the Pennsylvania State University, University Park, PA 16802 USA (e-mail: [email protected]; [email protected]). A. T. Krishnan and S. Krishnan are with Texas Instruments Incorporated, Dallas, TX 75243 USA (e-mail: [email protected]; [email protected]). Digital Object Identifier 10.1109/TDMR.2006.876598",

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doi = "10.1109/TDMR.2006.876598",

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AU - Lenahan, Patrick M.

AU - Krishnan, Anand T.

AU - Krishnan, Srikanth

N1 - Funding Information: Manuscript received December 15, 2005; revised February 10, 2006. This work was supported by Texas Instruments Incorporated through the Semiconductor Research Corporation. J. P. Campbell and P. M. Lenahan are with the Pennsylvania State University, University Park, PA 16802 USA (e-mail: [email protected]; [email protected]). A. T. Krishnan and S. Krishnan are with Texas Instruments Incorporated, Dallas, TX 75243 USA (e-mail: [email protected]; [email protected]). Digital Object Identifier 10.1109/TDMR.2006.876598

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N2 - A combination of MOSFET gate-controlled diode measurements and a very sensitive electron spin resonance technique called spin-dependent recombination was utilized to observe and identify defect centers generated by a negative bias temperature stress in fully processed SiO 2-based pMOSFETs. In SiO 2 devices, the defects include two Si/SiO 2 interface silicon dangling bond centers (P b0 and P b1) and may also include an oxide silicon dangling bond center (E′). The observations indicate that both P b0 and P b1 defects play major roles in these SiO 2-based devices and suggest that E′ centers could play an important role.

AB - A combination of MOSFET gate-controlled diode measurements and a very sensitive electron spin resonance technique called spin-dependent recombination was utilized to observe and identify defect centers generated by a negative bias temperature stress in fully processed SiO 2-based pMOSFETs. In SiO 2 devices, the defects include two Si/SiO 2 interface silicon dangling bond centers (P b0 and P b1) and may also include an oxide silicon dangling bond center (E′). The observations indicate that both P b0 and P b1 defects play major roles in these SiO 2-based devices and suggest that E′ centers could play an important role.

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JO - IEEE Transactions on Device and Materials Reliability

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IS - 2

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ER -

Observations of NBTI-induced atomic-scale defects

Abstract

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