Ohmic contacts to Al-rich n-AlGaN

E. D. Readinger, S. E. Mohney, T. G. Pribicko, J. H. Wang, K. O. Schweitz, U. Chowdhury, M. M. Wong, R. D. Dupuis, M. Pophristic, S. P. Guo

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17 Scopus citations


Ti/Al/Pt/Au and V/Al/Pt/Au ohmic contacts were studied on n-Al0.44Ga0.56N and n-Al0.6Ga0.4N. Optimised V/Al/Pt/Au contacts provided lower resistance than did Ti/Al/Pt/Au contacts, which are commonly used on less Al-rich n-AlGaN. Specific contact resistances of 1 × 10-5 Ω · cm2 and 4 × 10-5 were achieved on n-Al0.44Ga0.56N and n-Al0.6Ga0.4N, respectively.

Original languageEnglish (US)
Pages (from-to)1230-1231
Number of pages2
JournalElectronics Letters
Issue number20
StatePublished - Sep 26 2002

All Science Journal Classification (ASJC) codes

  • Electrical and Electronic Engineering


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