Abstract
Ti/Al/Pt/Au and V/Al/Pt/Au ohmic contacts were studied on n-Al0.44Ga0.56N and n-Al0.6Ga0.4N. Optimised V/Al/Pt/Au contacts provided lower resistance than did Ti/Al/Pt/Au contacts, which are commonly used on less Al-rich n-AlGaN. Specific contact resistances of 1 × 10-5 Ω · cm2 and 4 × 10-5 were achieved on n-Al0.44Ga0.56N and n-Al0.6Ga0.4N, respectively.
Original language | English (US) |
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Pages (from-to) | 1230-1231 |
Number of pages | 2 |
Journal | Electronics Letters |
Volume | 38 |
Issue number | 20 |
DOIs | |
State | Published - Sep 26 2002 |
All Science Journal Classification (ASJC) codes
- Electrical and Electronic Engineering