Ohmic contacts to Al-rich n-AlGaN

E. D. Readinger; S. E. Mohney; T. G. Pribicko; J. H. Wang; K. O. Schweitz; U. Chowdhury; M. M. Wong; R. D. Dupuis; M. Pophristic; S. P. Guo

doi:10.1049/el:20020800

Ohmic contacts to Al-rich n-AlGaN

E. D. Readinger
, S. E. Mohney
, T. G. Pribicko
, J. H. Wang
, K. O. Schweitz
, U. Chowdhury
, M. M. Wong
, R. D. Dupuis
, M. Pophristic
, S. P. Guo

Research output: Contribution to journal › Article › peer-review

18 Scopus citations

Abstract

Ti/Al/Pt/Au and V/Al/Pt/Au ohmic contacts were studied on n-Al_0.44Ga_0.56N and n-Al_0.6Ga_0.4N. Optimised V/Al/Pt/Au contacts provided lower resistance than did Ti/Al/Pt/Au contacts, which are commonly used on less Al-rich n-AlGaN. Specific contact resistances of 1 × 10^-5 Ω · cm² and 4 × 10^-5 were achieved on n-Al_0.44Ga_0.56N and n-Al_0.6Ga_0.4N, respectively.

Original language	English (US)
Pages (from-to)	1230-1231
Number of pages	2
Journal	Electronics Letters
Volume	38
Issue number	20
DOIs	https://doi.org/10.1049/el:20020800
State	Published - Sep 26 2002

All Science Journal Classification (ASJC) codes

Electrical and Electronic Engineering

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10.1049/el:20020800

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title = "Ohmic contacts to Al-rich n-AlGaN",

abstract = "Ti/Al/Pt/Au and V/Al/Pt/Au ohmic contacts were studied on n-Al0.44Ga0.56N and n-Al0.6Ga0.4N. Optimised V/Al/Pt/Au contacts provided lower resistance than did Ti/Al/Pt/Au contacts, which are commonly used on less Al-rich n-AlGaN. Specific contact resistances of 1 × 10-5 Ω · cm2 and 4 × 10-5 were achieved on n-Al0.44Ga0.56N and n-Al0.6Ga0.4N, respectively.",

author = "Readinger, \{E. D.\} and Mohney, \{S. E.\} and Pribicko, \{T. G.\} and Wang, \{J. H.\} and Schweitz, \{K. O.\} and U. Chowdhury and Wong, \{M. M.\} and Dupuis, \{R. D.\} and M. Pophristic and Guo, \{S. P.\}",

year = "2002",

month = sep,

day = "26",

doi = "10.1049/el:20020800",

language = "English (US)",

volume = "38",

pages = "1230--1231",

journal = "Electronics Letters",

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publisher = "John Wiley \& Sons Inc.",

number = "20",

}

TY - JOUR

T1 - Ohmic contacts to Al-rich n-AlGaN

AU - Readinger, E. D.

AU - Mohney, S. E.

AU - Pribicko, T. G.

AU - Wang, J. H.

AU - Schweitz, K. O.

AU - Chowdhury, U.

AU - Wong, M. M.

AU - Dupuis, R. D.

AU - Pophristic, M.

AU - Guo, S. P.

PY - 2002/9/26

Y1 - 2002/9/26

N2 - Ti/Al/Pt/Au and V/Al/Pt/Au ohmic contacts were studied on n-Al0.44Ga0.56N and n-Al0.6Ga0.4N. Optimised V/Al/Pt/Au contacts provided lower resistance than did Ti/Al/Pt/Au contacts, which are commonly used on less Al-rich n-AlGaN. Specific contact resistances of 1 × 10-5 Ω · cm2 and 4 × 10-5 were achieved on n-Al0.44Ga0.56N and n-Al0.6Ga0.4N, respectively.

AB - Ti/Al/Pt/Au and V/Al/Pt/Au ohmic contacts were studied on n-Al0.44Ga0.56N and n-Al0.6Ga0.4N. Optimised V/Al/Pt/Au contacts provided lower resistance than did Ti/Al/Pt/Au contacts, which are commonly used on less Al-rich n-AlGaN. Specific contact resistances of 1 × 10-5 Ω · cm2 and 4 × 10-5 were achieved on n-Al0.44Ga0.56N and n-Al0.6Ga0.4N, respectively.

UR - https://www.scopus.com/pages/publications/0037179901

UR - https://www.scopus.com/pages/publications/0037179901#tab=citedBy

U2 - 10.1049/el:20020800

DO - 10.1049/el:20020800

M3 - Article

AN - SCOPUS:0037179901

SN - 0013-5194

VL - 38

SP - 1230

EP - 1231

JO - Electronics Letters

JF - Electronics Letters

IS - 20

ER -

Ohmic contacts to Al-rich n-AlGaN

Abstract

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