Ohmic contacts to n-type AlGaN and nitride HEMT epilayers

P. K. Wang; K. O. Schweitz; T. G. Pribicko; S. E. Mohney; M. Pophristic; D. Gotthold

doi:10.1109/ISDRS.2001.984474

Ohmic contacts to n-type AlGaN and nitride HEMT epilayers

P. K. Wang, K. O. Schweitz, T. G. Pribicko, S. E. Mohney, M. Pophristic, D. Gotthold

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

2 Scopus citations

Abstract

The authors examine the influence of a variety of processing variables on the specific contact resistance of Ti/Al/Pt/Au ohmic contacts to n-type AlGaN, and we study the effect of replacing Ti with V when fabricating ohmic contacts to n-type AlGaN/GaN HEMT epilayers. The replacement of Ti with V allows the annealing temperature for formation of low resistance ohmic contacts to be decreased by 150°C.

Original language	English (US)
Title of host publication	2001 International Semiconductor Device Research Symposium, ISDRS 2001 - Proceedings
Publisher	Institute of Electrical and Electronics Engineers Inc.
Pages	199-200
Number of pages	2
ISBN (Electronic)	0780374320, 9780780374324
DOIs	https://doi.org/10.1109/ISDRS.2001.984474
State	Published - 2001
Event	International Semiconductor Device Research Symposium, ISDRS 2001 - Washington, United States Duration: Dec 5 2001 → Dec 7 2001

Publication series

Name	2001 International Semiconductor Device Research Symposium, ISDRS 2001 - Proceedings

Other

Other	International Semiconductor Device Research Symposium, ISDRS 2001
Country/Territory	United States
City	Washington
Period	12/5/01 → 12/7/01

All Science Journal Classification (ASJC) codes

Electrical and Electronic Engineering
Electronic, Optical and Magnetic Materials

Access to Document

10.1109/ISDRS.2001.984474

Cite this

Wang, P. K., Schweitz, K. O., Pribicko, T. G., Mohney, S. E., Pophristic, M., & Gotthold, D. (2001). Ohmic contacts to n-type AlGaN and nitride HEMT epilayers. In 2001 International Semiconductor Device Research Symposium, ISDRS 2001 - Proceedings (pp. 199-200). Article 984474 (2001 International Semiconductor Device Research Symposium, ISDRS 2001 - Proceedings). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/ISDRS.2001.984474

@inproceedings{6fc08b13dce242b7bfbc6658e258587f,

title = "Ohmic contacts to n-type AlGaN and nitride HEMT epilayers",

abstract = "The authors examine the influence of a variety of processing variables on the specific contact resistance of Ti/Al/Pt/Au ohmic contacts to n-type AlGaN, and we study the effect of replacing Ti with V when fabricating ohmic contacts to n-type AlGaN/GaN HEMT epilayers. The replacement of Ti with V allows the annealing temperature for formation of low resistance ohmic contacts to be decreased by 150°C.",

author = "Wang, {P. K.} and Schweitz, {K. O.} and Pribicko, {T. G.} and Mohney, {S. E.} and M. Pophristic and D. Gotthold",

note = "Publisher Copyright: {\textcopyright} 2001 ISDRS-Univ of Maryland.; International Semiconductor Device Research Symposium, ISDRS 2001 ; Conference date: 05-12-2001 Through 07-12-2001",

year = "2001",

doi = "10.1109/ISDRS.2001.984474",

language = "English (US)",

series = "2001 International Semiconductor Device Research Symposium, ISDRS 2001 - Proceedings",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

pages = "199--200",

booktitle = "2001 International Semiconductor Device Research Symposium, ISDRS 2001 - Proceedings",

address = "United States",

}

Wang, PK, Schweitz, KO, Pribicko, TG, Mohney, SE, Pophristic, M & Gotthold, D 2001, Ohmic contacts to n-type AlGaN and nitride HEMT epilayers. in 2001 International Semiconductor Device Research Symposium, ISDRS 2001 - Proceedings., 984474, 2001 International Semiconductor Device Research Symposium, ISDRS 2001 - Proceedings, Institute of Electrical and Electronics Engineers Inc., pp. 199-200, International Semiconductor Device Research Symposium, ISDRS 2001, Washington, United States, 12/5/01. https://doi.org/10.1109/ISDRS.2001.984474

Ohmic contacts to n-type AlGaN and nitride HEMT epilayers. / Wang, P. K.; Schweitz, K. O.; Pribicko, T. G. et al.
2001 International Semiconductor Device Research Symposium, ISDRS 2001 - Proceedings. Institute of Electrical and Electronics Engineers Inc., 2001. p. 199-200 984474 (2001 International Semiconductor Device Research Symposium, ISDRS 2001 - Proceedings).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

TY - GEN

T1 - Ohmic contacts to n-type AlGaN and nitride HEMT epilayers

AU - Wang, P. K.

AU - Schweitz, K. O.

AU - Pribicko, T. G.

AU - Mohney, S. E.

AU - Pophristic, M.

AU - Gotthold, D.

PY - 2001

Y1 - 2001

N2 - The authors examine the influence of a variety of processing variables on the specific contact resistance of Ti/Al/Pt/Au ohmic contacts to n-type AlGaN, and we study the effect of replacing Ti with V when fabricating ohmic contacts to n-type AlGaN/GaN HEMT epilayers. The replacement of Ti with V allows the annealing temperature for formation of low resistance ohmic contacts to be decreased by 150°C.

AB - The authors examine the influence of a variety of processing variables on the specific contact resistance of Ti/Al/Pt/Au ohmic contacts to n-type AlGaN, and we study the effect of replacing Ti with V when fabricating ohmic contacts to n-type AlGaN/GaN HEMT epilayers. The replacement of Ti with V allows the annealing temperature for formation of low resistance ohmic contacts to be decreased by 150°C.

UR - http://www.scopus.com/inward/record.url?scp=84961784513&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84961784513&partnerID=8YFLogxK

U2 - 10.1109/ISDRS.2001.984474

DO - 10.1109/ISDRS.2001.984474

M3 - Conference contribution

AN - SCOPUS:84961784513

T3 - 2001 International Semiconductor Device Research Symposium, ISDRS 2001 - Proceedings

SP - 199

EP - 200

BT - 2001 International Semiconductor Device Research Symposium, ISDRS 2001 - Proceedings

PB - Institute of Electrical and Electronics Engineers Inc.

T2 - International Semiconductor Device Research Symposium, ISDRS 2001

Y2 - 5 December 2001 through 7 December 2001

ER -

Wang PK, Schweitz KO, Pribicko TG, Mohney SE, Pophristic M, Gotthold D. Ohmic contacts to n-type AlGaN and nitride HEMT epilayers. In 2001 International Semiconductor Device Research Symposium, ISDRS 2001 - Proceedings. Institute of Electrical and Electronics Engineers Inc. 2001. p. 199-200. 984474. (2001 International Semiconductor Device Research Symposium, ISDRS 2001 - Proceedings). doi: 10.1109/ISDRS.2001.984474

Ohmic contacts to n-type AlGaN and nitride HEMT epilayers

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