Ohmic contacts to n-type silicon-germanium

S. F. Nelson; T. N. Jackson

doi:10.1063/1.117246

Ohmic contacts to n-type silicon-germanium

S. F. Nelson, T. N. Jackson

Research output: Contribution to journal › Article › peer-review

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Abstract

We have studied both alloyed metal and ion-implanted Ohmic contacts to n-type silicon/silicon germanium heterostructures. We found that gold/antimony contacts can distort low temperature mobility measurements, and seriously degrade a sample after a short time. A more reliable alternative alloy is silver/antimony. We also found phosphorous ion-implanted contacts, annealed to 600°C for 30 min, to be reliably Ohmic and of low resistivity at low temperatures.

Original language	English (US)
Pages (from-to)	3563-3565
Number of pages	3
Journal	Applied Physics Letters
Volume	69
Issue number	23
DOIs	https://doi.org/10.1063/1.117246
State	Published - Dec 2 1996

All Science Journal Classification (ASJC) codes

Physics and Astronomy (miscellaneous)

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10.1063/1.117246

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@article{ecd1e96342944806b517ad7ec4329115,

title = "Ohmic contacts to n-type silicon-germanium",

abstract = "We have studied both alloyed metal and ion-implanted Ohmic contacts to n-type silicon/silicon germanium heterostructures. We found that gold/antimony contacts can distort low temperature mobility measurements, and seriously degrade a sample after a short time. A more reliable alternative alloy is silver/antimony. We also found phosphorous ion-implanted contacts, annealed to 600°C for 30 min, to be reliably Ohmic and of low resistivity at low temperatures.",

author = "Nelson, {S. F.} and Jackson, {T. N.}",

year = "1996",

month = dec,

day = "2",

doi = "10.1063/1.117246",

language = "English (US)",

volume = "69",

pages = "3563--3565",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "American Institute of Physics",

number = "23",

}

TY - JOUR

T1 - Ohmic contacts to n-type silicon-germanium

AU - Nelson, S. F.

AU - Jackson, T. N.

PY - 1996/12/2

Y1 - 1996/12/2

N2 - We have studied both alloyed metal and ion-implanted Ohmic contacts to n-type silicon/silicon germanium heterostructures. We found that gold/antimony contacts can distort low temperature mobility measurements, and seriously degrade a sample after a short time. A more reliable alternative alloy is silver/antimony. We also found phosphorous ion-implanted contacts, annealed to 600°C for 30 min, to be reliably Ohmic and of low resistivity at low temperatures.

AB - We have studied both alloyed metal and ion-implanted Ohmic contacts to n-type silicon/silicon germanium heterostructures. We found that gold/antimony contacts can distort low temperature mobility measurements, and seriously degrade a sample after a short time. A more reliable alternative alloy is silver/antimony. We also found phosphorous ion-implanted contacts, annealed to 600°C for 30 min, to be reliably Ohmic and of low resistivity at low temperatures.

UR - http://www.scopus.com/inward/record.url?scp=6944232630&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=6944232630&partnerID=8YFLogxK

U2 - 10.1063/1.117246

DO - 10.1063/1.117246

M3 - Article

AN - SCOPUS:6944232630

SN - 0003-6951

VL - 69

SP - 3563

EP - 3565

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 23

ER -

Ohmic contacts to n-type silicon-germanium

Abstract

All Science Journal Classification (ASJC) codes

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