Ohmic contacts to n-type silicon-germanium

S. F. Nelson; Thomas Nelson Jackson

Ohmic contacts to n-type silicon-germanium

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Abstract

We have studied both alloyed metal and ion-implanted Ohmic contacts to n-type silicon/silicon germanium heterostructures. We found that gold/antimony contacts can distort low temperature mobility measurements, and seriously degrade a sample after a short time. A more reliable alternative alloy is silver/antimony. We also found phosphorous ion-implanted contacts, annealed to 600°C for 30 min, to be reliably Ohmic and of low resistivity at low temperatures.

Original language	English (US)
Number of pages	1
Journal	Applied Physics Letters
State	Published - Dec 1 1995

All Science Journal Classification (ASJC) codes

Physics and Astronomy (miscellaneous)

Cite this

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title = "Ohmic contacts to n-type silicon-germanium",

abstract = "We have studied both alloyed metal and ion-implanted Ohmic contacts to n-type silicon/silicon germanium heterostructures. We found that gold/antimony contacts can distort low temperature mobility measurements, and seriously degrade a sample after a short time. A more reliable alternative alloy is silver/antimony. We also found phosphorous ion-implanted contacts, annealed to 600°C for 30 min, to be reliably Ohmic and of low resistivity at low temperatures.",

author = "Nelson, {S. F.} and Jackson, {Thomas Nelson}",

year = "1995",

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language = "English (US)",

journal = "Applied Physics Letters",

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publisher = "American Institute of Physics",

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AU - Nelson, S. F.

AU - Jackson, Thomas Nelson

PY - 1995/12/1

Y1 - 1995/12/1

N2 - We have studied both alloyed metal and ion-implanted Ohmic contacts to n-type silicon/silicon germanium heterostructures. We found that gold/antimony contacts can distort low temperature mobility measurements, and seriously degrade a sample after a short time. A more reliable alternative alloy is silver/antimony. We also found phosphorous ion-implanted contacts, annealed to 600°C for 30 min, to be reliably Ohmic and of low resistivity at low temperatures.

AB - We have studied both alloyed metal and ion-implanted Ohmic contacts to n-type silicon/silicon germanium heterostructures. We found that gold/antimony contacts can distort low temperature mobility measurements, and seriously degrade a sample after a short time. A more reliable alternative alloy is silver/antimony. We also found phosphorous ion-implanted contacts, annealed to 600°C for 30 min, to be reliably Ohmic and of low resistivity at low temperatures.

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M3 - Article

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SN - 0003-6951

JO - Applied Physics Letters

JF - Applied Physics Letters

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Ohmic contacts to n-type silicon-germanium

Abstract

All Science Journal Classification (ASJC) codes

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