Ohmic contacts to n-type silicon-germanium

S. F. Nelson; T. N. Jackson

doi:10.1063/1.117246

Ohmic contacts to n-type silicon-germanium

S. F. Nelson, T. N. Jackson

Research output: Contribution to journal › Article › peer-review

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Abstract

We have studied both alloyed metal and ion-implanted Ohmic contacts to n-type silicon/silicon germanium heterostructures. We found that gold/antimony contacts can distort low temperature mobility measurements, and seriously degrade a sample after a short time. A more reliable alternative alloy is silver/antimony. We also found phosphorous ion-implanted contacts, annealed to 600°C for 30 min, to be reliably Ohmic and of low resistivity at low temperatures.

Original language	English (US)
Pages (from-to)	3563-3565
Number of pages	3
Journal	Applied Physics Letters
Volume	69
Issue number	23
DOIs	https://doi.org/10.1063/1.117246
State	Published - Dec 2 1996

All Science Journal Classification (ASJC) codes

Physics and Astronomy (miscellaneous)

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10.1063/1.117246

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title = "Ohmic contacts to n-type silicon-germanium",

abstract = "We have studied both alloyed metal and ion-implanted Ohmic contacts to n-type silicon/silicon germanium heterostructures. We found that gold/antimony contacts can distort low temperature mobility measurements, and seriously degrade a sample after a short time. A more reliable alternative alloy is silver/antimony. We also found phosphorous ion-implanted contacts, annealed to 600°C for 30 min, to be reliably Ohmic and of low resistivity at low temperatures.",

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AU - Nelson, S. F.

AU - Jackson, T. N.

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Y1 - 1996/12/2

N2 - We have studied both alloyed metal and ion-implanted Ohmic contacts to n-type silicon/silicon germanium heterostructures. We found that gold/antimony contacts can distort low temperature mobility measurements, and seriously degrade a sample after a short time. A more reliable alternative alloy is silver/antimony. We also found phosphorous ion-implanted contacts, annealed to 600°C for 30 min, to be reliably Ohmic and of low resistivity at low temperatures.

AB - We have studied both alloyed metal and ion-implanted Ohmic contacts to n-type silicon/silicon germanium heterostructures. We found that gold/antimony contacts can distort low temperature mobility measurements, and seriously degrade a sample after a short time. A more reliable alternative alloy is silver/antimony. We also found phosphorous ion-implanted contacts, annealed to 600°C for 30 min, to be reliably Ohmic and of low resistivity at low temperatures.

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JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 23

ER -

Ohmic contacts to n-type silicon-germanium

Abstract

All Science Journal Classification (ASJC) codes

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