@inproceedings{ff60fa3ceece4672a087aa745213c58e,
title = "Ohmic contacts to p-type III-V semiconductors for the base of heterojunction bipolar transistors",
abstract = "Ohmic contacts to p-type In0.25Ga0.75Sb, InAs, and InAs0.8P0.2 have been investigated for the base of heterojunction bipolar transistors. On all these semiconductors, using Pd and/or Pt as the first layer in the metallization stack provided the lowest contact resistances. Specific contact resistances as low as 3 × 10-7 Ω-cm2 were measured for Au/W/Pd/p-InGaSb. Thin reactive layers of Pd or Pt were used beneath an unreactive W barrier to keep the contacts shallow, but contact resistance and thermal stability were sacrificed when 2 nm of Pd was used instead of 5 nm. The lowest contact resistance we measured on p-InAs was obtained with Pd/Pt/Au, but Pd/W/Au exhibited better thermal stability at 250°C. For p-type InAsP, Pd/Ru/Au provided a specific contact resistance of 4 × 10-6 Ω-cm2 as deposited. The contact consumed only 4 ± 2 nm of InAsP after 3 days at 250°C, and its resistance remained low. copyright The Electrochemical Society.",
author = "Mohney, \{S. E.\} and Wang, \{S. H.\} and Lysczek, \{E. M.\} and Robinson, \{J. A.\}",
year = "2006",
doi = "10.1149/1.2357195",
language = "English (US)",
series = "ECS Transactions",
publisher = "Electrochemical Society Inc.",
number = "5",
pages = "47--56",
booktitle = "State-of-the-Art Program on Compound Semiconductors 45 (SOTAPOCS 45) -and- Wide Bandgap Semiconductor Materials and Devices 7",
edition = "5",
note = "State-of-the-Art Program on Compound Semiconductors 45 (SOTAPOCS 45) -and- Wide Bandgap Semiconductor Materials and Devices 7 - 210th Electrochemical Society Meeting ; Conference date: 29-10-2006 Through 03-11-2006",
}