Ohmic contacts to p-type InAs

E. M. Lysczek; J. A. Robinson; S. E. Mohney

doi:10.1016/j.mseb.2006.07.016

Ohmic contacts to p-type InAs

E. M. Lysczek, J. A. Robinson, S. E. Mohney

Research output: Contribution to journal › Article › peer-review

18 Scopus citations

Abstract

Low-resistance ohmic contact metallizations were evaluated on p-InAs (Be doped 2 × 10¹⁹ cm^-3) with the goal of achieving reaction morphologies and thermal stabilities suitable for demanding heterojunction bipolar transistor applications. Each contact consists of three or four layers. The first layer is used to lower the resistance at the metal/semiconductor interface. The middle layer (or pair of layers) acts as a diffusion barrier between the other two layers. The third layer, which is typically gold, is used to lower the metal sheet resistance. Of the first layer metals used (Ti, Pd and Co), Pd showed the lowest specific contact resistance both as-deposited (1.6 × 10^-6 Ω cm²) and after aging at 250 °C for 9 h (3.4 × 10^-6 Ω cm²). Aging of the Ti/Pt/Au contacts resulted in indium agglomerations or voids at the interface. The Pd/W/Au and Pd/Ti/Pt/Au contacts showed the best morphology, consuming an average of only 6-7 nm of semiconductor after aging at 250 °C for 9 h.

Original language	English (US)
Pages (from-to)	44-48
Number of pages	5
Journal	Materials Science and Engineering: B
Volume	134
Issue number	1
DOIs	https://doi.org/10.1016/j.mseb.2006.07.016
State	Published - Sep 25 2006

All Science Journal Classification (ASJC) codes

General Materials Science
Condensed Matter Physics
Mechanics of Materials
Mechanical Engineering

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10.1016/j.mseb.2006.07.016

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title = "Ohmic contacts to p-type InAs",

abstract = "Low-resistance ohmic contact metallizations were evaluated on p-InAs (Be doped 2 × 1019 cm-3) with the goal of achieving reaction morphologies and thermal stabilities suitable for demanding heterojunction bipolar transistor applications. Each contact consists of three or four layers. The first layer is used to lower the resistance at the metal/semiconductor interface. The middle layer (or pair of layers) acts as a diffusion barrier between the other two layers. The third layer, which is typically gold, is used to lower the metal sheet resistance. Of the first layer metals used (Ti, Pd and Co), Pd showed the lowest specific contact resistance both as-deposited (1.6 × 10-6 Ω cm2) and after aging at 250 °C for 9 h (3.4 × 10-6 Ω cm2). Aging of the Ti/Pt/Au contacts resulted in indium agglomerations or voids at the interface. The Pd/W/Au and Pd/Ti/Pt/Au contacts showed the best morphology, consuming an average of only 6-7 nm of semiconductor after aging at 250 °C for 9 h.",

author = "Lysczek, {E. M.} and Robinson, {J. A.} and Mohney, {S. E.}",

note = "Funding Information: The authors are grateful to DARPA through ONR grants N00014-05-1-0194 and N0014-01-1-0790 for financial support and to David Chow at HRL Laboratories for supplying the InAs epilayers used in this work.",

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doi = "10.1016/j.mseb.2006.07.016",

language = "English (US)",

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AU - Lysczek, E. M.

AU - Robinson, J. A.

AU - Mohney, S. E.

N1 - Funding Information: The authors are grateful to DARPA through ONR grants N00014-05-1-0194 and N0014-01-1-0790 for financial support and to David Chow at HRL Laboratories for supplying the InAs epilayers used in this work.

PY - 2006/9/25

Y1 - 2006/9/25

N2 - Low-resistance ohmic contact metallizations were evaluated on p-InAs (Be doped 2 × 1019 cm-3) with the goal of achieving reaction morphologies and thermal stabilities suitable for demanding heterojunction bipolar transistor applications. Each contact consists of three or four layers. The first layer is used to lower the resistance at the metal/semiconductor interface. The middle layer (or pair of layers) acts as a diffusion barrier between the other two layers. The third layer, which is typically gold, is used to lower the metal sheet resistance. Of the first layer metals used (Ti, Pd and Co), Pd showed the lowest specific contact resistance both as-deposited (1.6 × 10-6 Ω cm2) and after aging at 250 °C for 9 h (3.4 × 10-6 Ω cm2). Aging of the Ti/Pt/Au contacts resulted in indium agglomerations or voids at the interface. The Pd/W/Au and Pd/Ti/Pt/Au contacts showed the best morphology, consuming an average of only 6-7 nm of semiconductor after aging at 250 °C for 9 h.

AB - Low-resistance ohmic contact metallizations were evaluated on p-InAs (Be doped 2 × 1019 cm-3) with the goal of achieving reaction morphologies and thermal stabilities suitable for demanding heterojunction bipolar transistor applications. Each contact consists of three or four layers. The first layer is used to lower the resistance at the metal/semiconductor interface. The middle layer (or pair of layers) acts as a diffusion barrier between the other two layers. The third layer, which is typically gold, is used to lower the metal sheet resistance. Of the first layer metals used (Ti, Pd and Co), Pd showed the lowest specific contact resistance both as-deposited (1.6 × 10-6 Ω cm2) and after aging at 250 °C for 9 h (3.4 × 10-6 Ω cm2). Aging of the Ti/Pt/Au contacts resulted in indium agglomerations or voids at the interface. The Pd/W/Au and Pd/Ti/Pt/Au contacts showed the best morphology, consuming an average of only 6-7 nm of semiconductor after aging at 250 °C for 9 h.

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Ohmic contacts to p-type InAs

Abstract

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