On contact lithography of high-aspect-ratio features with incoherent broadband ultraviolet illumination

Fei Wang; Katherine E. Weaver; Akhlesh Lakhtakia; Mark W. Horn

doi:10.1016/j.mee.2004.08.007

On contact lithography of high-aspect-ratio features with incoherent broadband ultraviolet illumination

Fei Wang, Katherine E. Weaver, Akhlesh Lakhtakia, Mark W. Horn

Research output: Contribution to journal › Article › peer-review

1 Scopus citations

Abstract

The electromagnetic response of a system, comprising a quartz binary phase-shift mask in contact with a photoresist layer over a silicon wafer and exposed to ultraviolet (UV) light in the 250-610 nm spectral regime, was computed with emphasis on absorption in the photoresist. Results indicate that high-aspect-ratio features can be produced by incoherent broadband illumination, consistently with recent experimental findings.

Original language	English (US)
Pages (from-to)	55-57
Number of pages	3
Journal	Microelectronic Engineering
Volume	77
Issue number	1
DOIs	https://doi.org/10.1016/j.mee.2004.08.007
State	Published - Jan 2005

All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials
Condensed Matter Physics
Surfaces, Coatings and Films
Atomic and Molecular Physics, and Optics
Electrical and Electronic Engineering

Access to Document

10.1016/j.mee.2004.08.007

Cite this

@article{e66b337f65764c19b42cd203798e07fc,

title = "On contact lithography of high-aspect-ratio features with incoherent broadband ultraviolet illumination",

abstract = "The electromagnetic response of a system, comprising a quartz binary phase-shift mask in contact with a photoresist layer over a silicon wafer and exposed to ultraviolet (UV) light in the 250-610 nm spectral regime, was computed with emphasis on absorption in the photoresist. Results indicate that high-aspect-ratio features can be produced by incoherent broadband illumination, consistently with recent experimental findings.",

author = "Fei Wang and Weaver, {Katherine E.} and Akhlesh Lakhtakia and Horn, {Mark W.}",

year = "2005",

month = jan,

doi = "10.1016/j.mee.2004.08.007",

language = "English (US)",

volume = "77",

pages = "55--57",

journal = "Microelectronic Engineering",

issn = "0167-9317",

publisher = "Elsevier B.V.",

number = "1",

}

TY - JOUR

T1 - On contact lithography of high-aspect-ratio features with incoherent broadband ultraviolet illumination

AU - Wang, Fei

AU - Weaver, Katherine E.

AU - Lakhtakia, Akhlesh

AU - Horn, Mark W.

PY - 2005/1

Y1 - 2005/1

N2 - The electromagnetic response of a system, comprising a quartz binary phase-shift mask in contact with a photoresist layer over a silicon wafer and exposed to ultraviolet (UV) light in the 250-610 nm spectral regime, was computed with emphasis on absorption in the photoresist. Results indicate that high-aspect-ratio features can be produced by incoherent broadband illumination, consistently with recent experimental findings.

AB - The electromagnetic response of a system, comprising a quartz binary phase-shift mask in contact with a photoresist layer over a silicon wafer and exposed to ultraviolet (UV) light in the 250-610 nm spectral regime, was computed with emphasis on absorption in the photoresist. Results indicate that high-aspect-ratio features can be produced by incoherent broadband illumination, consistently with recent experimental findings.

UR - http://www.scopus.com/inward/record.url?scp=9644269111&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=9644269111&partnerID=8YFLogxK

U2 - 10.1016/j.mee.2004.08.007

DO - 10.1016/j.mee.2004.08.007

M3 - Article

AN - SCOPUS:9644269111

SN - 0167-9317

VL - 77

SP - 55

EP - 57

JO - Microelectronic Engineering

JF - Microelectronic Engineering

IS - 1

ER -

On contact lithography of high-aspect-ratio features with incoherent broadband ultraviolet illumination

Abstract

All Science Journal Classification (ASJC) codes

Access to Document

Other files and links

Fingerprint

Cite this