On contact lithography of high-aspect-ratio features with incoherent broadband ultraviolet illumination

Fei Wang; Katherine E. Weaver; Akhlesh Lakhtakia; Mark W. Horn

doi:10.1016/j.mee.2004.08.007

On contact lithography of high-aspect-ratio features with incoherent broadband ultraviolet illumination

Fei Wang
, Katherine E. Weaver
, Akhlesh Lakhtakia
, Mark W. Horn

Research output: Contribution to journal › Article › peer-review

1 Scopus citations

Abstract

The electromagnetic response of a system, comprising a quartz binary phase-shift mask in contact with a photoresist layer over a silicon wafer and exposed to ultraviolet (UV) light in the 250-610 nm spectral regime, was computed with emphasis on absorption in the photoresist. Results indicate that high-aspect-ratio features can be produced by incoherent broadband illumination, consistently with recent experimental findings.

Original language	English (US)
Pages (from-to)	55-57
Number of pages	3
Journal	Microelectronic Engineering
Volume	77
Issue number	1
DOIs	https://doi.org/10.1016/j.mee.2004.08.007
State	Published - Jan 2005

All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials
Condensed Matter Physics
Surfaces, Coatings and Films
Atomic and Molecular Physics, and Optics
Electrical and Electronic Engineering

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10.1016/j.mee.2004.08.007

Cite this

@article{e66b337f65764c19b42cd203798e07fc,

title = "On contact lithography of high-aspect-ratio features with incoherent broadband ultraviolet illumination",

abstract = "The electromagnetic response of a system, comprising a quartz binary phase-shift mask in contact with a photoresist layer over a silicon wafer and exposed to ultraviolet (UV) light in the 250-610 nm spectral regime, was computed with emphasis on absorption in the photoresist. Results indicate that high-aspect-ratio features can be produced by incoherent broadband illumination, consistently with recent experimental findings.",

author = "Fei Wang and Weaver, \{Katherine E.\} and Akhlesh Lakhtakia and Horn, \{Mark W.\}",

year = "2005",

month = jan,

doi = "10.1016/j.mee.2004.08.007",

language = "English (US)",

volume = "77",

pages = "55--57",

journal = "Microelectronic Engineering",

issn = "0167-9317",

publisher = "Elsevier B.V.",

number = "1",

}

TY - JOUR

T1 - On contact lithography of high-aspect-ratio features with incoherent broadband ultraviolet illumination

AU - Wang, Fei

AU - Weaver, Katherine E.

AU - Lakhtakia, Akhlesh

AU - Horn, Mark W.

PY - 2005/1

Y1 - 2005/1

N2 - The electromagnetic response of a system, comprising a quartz binary phase-shift mask in contact with a photoresist layer over a silicon wafer and exposed to ultraviolet (UV) light in the 250-610 nm spectral regime, was computed with emphasis on absorption in the photoresist. Results indicate that high-aspect-ratio features can be produced by incoherent broadband illumination, consistently with recent experimental findings.

AB - The electromagnetic response of a system, comprising a quartz binary phase-shift mask in contact with a photoresist layer over a silicon wafer and exposed to ultraviolet (UV) light in the 250-610 nm spectral regime, was computed with emphasis on absorption in the photoresist. Results indicate that high-aspect-ratio features can be produced by incoherent broadband illumination, consistently with recent experimental findings.

UR - https://www.scopus.com/pages/publications/9644269111

UR - https://www.scopus.com/pages/publications/9644269111#tab=citedBy

U2 - 10.1016/j.mee.2004.08.007

DO - 10.1016/j.mee.2004.08.007

M3 - Article

AN - SCOPUS:9644269111

SN - 0167-9317

VL - 77

SP - 55

EP - 57

JO - Microelectronic Engineering

JF - Microelectronic Engineering

IS - 1

ER -

On contact lithography of high-aspect-ratio features with incoherent broadband ultraviolet illumination

Abstract

All Science Journal Classification (ASJC) codes

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