We compare the transient response of double-gate thin-body-silicon interband tunnel field-effect transistor (TFET) with its metal-oxide- semiconductor field-effect transistor counterpart. Due to the presence of source side tunneling barrier, the silicon TFETs exhibit enhanced Miller capacitance, resulting in large voltage overshoot/undershoot in its large-signal switching characteristics. This adversely impacts the performance of Si TFETs for digital logic applications. It is shown that TFETs based on lower bandgap and lower density of states materials like indium arsenide show significant improvement in switching behavior due to its lower capacitance and higher ON current at reduced voltages.
All Science Journal Classification (ASJC) codes
- Electronic, Optical and Magnetic Materials
- Electrical and Electronic Engineering