On enhanced miller capacitance effect □ in interband tunnel transistors

Saurabh Mookerjea, Ramakrishnan Krishnan, Suman Datta, Vijaykrishnan Narayanan

Research output: Contribution to journalArticlepeer-review

202 Scopus citations


We compare the transient response of double-gate thin-body-silicon interband tunnel field-effect transistor (TFET) with its metal-oxide- semiconductor field-effect transistor counterpart. Due to the presence of source side tunneling barrier, the silicon TFETs exhibit enhanced Miller capacitance, resulting in large voltage overshoot/undershoot in its large-signal switching characteristics. This adversely impacts the performance of Si TFETs for digital logic applications. It is shown that TFETs based on lower bandgap and lower density of states materials like indium arsenide show significant improvement in switching behavior due to its lower capacitance and higher ON current at reduced voltages.

Original languageEnglish (US)
Article number5232873
Pages (from-to)1102-1104
Number of pages3
JournalIEEE Electron Device Letters
Issue number10
StatePublished - Oct 2009

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering


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