On Resolving the Anomaly of Indium-tin Oxide Silicon Junctions

S. Ashok; S. J. Fonash; R. Singh; P. Wiley

doi:10.1109/EDL.1981.25392

On Resolving the Anomaly of Indium-tin Oxide Silicon Junctions

S. Ashok, S. J. Fonash, R. Singh, P. Wiley

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34 Scopus citations

Abstract

Experimental evidence is presented to resolve the anomalous rectifying behavior of indium-tin oxide (ITO)/silicon junctions. Previous work has demonstrated that the rectifying direction for this hetero junction depends on the method used to deposit the ITO. It is shown here that the cause for this is the existence of damaged surface layers in junctions subject to ion beam processing. Irrespective of the material deposited and irrespective of the doping type, ion-beam sputtering tends to cause the silicon band edges to bend downwards at the surface. It is for this reason that ion-beam deposited ITO gives a rectifying junction on p-Si and an ohmic contact on n-Si.

Original language	English (US)
Pages (from-to)	184-186
Number of pages	3
Journal	IEEE Electron Device Letters
Volume	2
Issue number	7
DOIs	https://doi.org/10.1109/EDL.1981.25392
State	Published - Apr 1981

All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials
Electrical and Electronic Engineering

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10.1109/EDL.1981.25392

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title = "On Resolving the Anomaly of Indium-tin Oxide Silicon Junctions",

abstract = "Experimental evidence is presented to resolve the anomalous rectifying behavior of indium-tin oxide (ITO)/silicon junctions. Previous work has demonstrated that the rectifying direction for this hetero junction depends on the method used to deposit the ITO. It is shown here that the cause for this is the existence of damaged surface layers in junctions subject to ion beam processing. Irrespective of the material deposited and irrespective of the doping type, ion-beam sputtering tends to cause the silicon band edges to bend downwards at the surface. It is for this reason that ion-beam deposited ITO gives a rectifying junction on p-Si and an ohmic contact on n-Si.",

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AU - Ashok, S.

AU - Fonash, S. J.

AU - Singh, R.

AU - Wiley, P.

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N2 - Experimental evidence is presented to resolve the anomalous rectifying behavior of indium-tin oxide (ITO)/silicon junctions. Previous work has demonstrated that the rectifying direction for this hetero junction depends on the method used to deposit the ITO. It is shown here that the cause for this is the existence of damaged surface layers in junctions subject to ion beam processing. Irrespective of the material deposited and irrespective of the doping type, ion-beam sputtering tends to cause the silicon band edges to bend downwards at the surface. It is for this reason that ion-beam deposited ITO gives a rectifying junction on p-Si and an ohmic contact on n-Si.

AB - Experimental evidence is presented to resolve the anomalous rectifying behavior of indium-tin oxide (ITO)/silicon junctions. Previous work has demonstrated that the rectifying direction for this hetero junction depends on the method used to deposit the ITO. It is shown here that the cause for this is the existence of damaged surface layers in junctions subject to ion beam processing. Irrespective of the material deposited and irrespective of the doping type, ion-beam sputtering tends to cause the silicon band edges to bend downwards at the surface. It is for this reason that ion-beam deposited ITO gives a rectifying junction on p-Si and an ohmic contact on n-Si.

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On Resolving the Anomaly of Indium-tin Oxide Silicon Junctions

Abstract

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