On The Absolute Sensitivity of Near-Zero Field Magnetoresistance for Device Reliability Studies

Elijah A. Allridge; Patrick M. Lenahan

doi:10.1109/IIRW59383.2023.10477708

On The Absolute Sensitivity of Near-Zero Field Magnetoresistance for Device Reliability Studies

Elijah A. Allridge
, Patrick M. Lenahan

Engineering Science and Mechanics

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Abstract

We report on the absolute sensitivity of a new semiconductor device reliability technique, near-zero field magnetoresistance. There has been fairly substantial effort in developing this tool for the analysis of defect structures, but the absolute sensitivity of the technique has yet to been explored. The primary goal of this study is to find an absolute sensitivity value, as well as to determine the spectrometer parameters for achieving this maximum sensitivity. Using the dc I-V biasing scheme on Si/SiO₂ MOSFET arrays, we show that this technique is more sensitive and easier to perform than its sister technique, electrically detected magnetic resonance. We find that the absolute sensitivity is fewer than 1,000 defects, and we hypothesize that future efforts could allow for the technique to achieve sensitivity to fewer than 100 defects.

Original language	English (US)
Title of host publication	2023 IEEE International Integrated Reliability Workshop, IIRW 2023
Publisher	Institute of Electrical and Electronics Engineers Inc.
ISBN (Electronic)	9798350327274
DOIs	https://doi.org/10.1109/IIRW59383.2023.10477708
State	Published - 2023
Event	2023 IEEE International Integrated Reliability Workshop, IIRW 2023 - South Lake Tahoe, United States Duration: Oct 8 2023 → Oct 12 2023

Publication series

Name	IEEE International Integrated Reliability Workshop Final Report
ISSN (Print)	1930-8841
ISSN (Electronic)	2374-8036

Conference

Conference	2023 IEEE International Integrated Reliability Workshop, IIRW 2023
Country/Territory	United States
City	South Lake Tahoe
Period	10/8/23 → 10/12/23

All Science Journal Classification (ASJC) codes

Electrical and Electronic Engineering
Safety, Risk, Reliability and Quality
Electronic, Optical and Magnetic Materials

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10.1109/IIRW59383.2023.10477708

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Allridge, E. A., & Lenahan, P. M. (2023). On The Absolute Sensitivity of Near-Zero Field Magnetoresistance for Device Reliability Studies. In 2023 IEEE International Integrated Reliability Workshop, IIRW 2023 (IEEE International Integrated Reliability Workshop Final Report). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/IIRW59383.2023.10477708

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title = "On The Absolute Sensitivity of Near-Zero Field Magnetoresistance for Device Reliability Studies",

abstract = "We report on the absolute sensitivity of a new semiconductor device reliability technique, near-zero field magnetoresistance. There has been fairly substantial effort in developing this tool for the analysis of defect structures, but the absolute sensitivity of the technique has yet to been explored. The primary goal of this study is to find an absolute sensitivity value, as well as to determine the spectrometer parameters for achieving this maximum sensitivity. Using the dc I-V biasing scheme on Si/SiO2 MOSFET arrays, we show that this technique is more sensitive and easier to perform than its sister technique, electrically detected magnetic resonance. We find that the absolute sensitivity is fewer than 1,000 defects, and we hypothesize that future efforts could allow for the technique to achieve sensitivity to fewer than 100 defects.",

author = "Allridge, \{Elijah A.\} and Lenahan, \{Patrick M.\}",

note = "Publisher Copyright: {\textcopyright} 2023 IEEE.; 2023 IEEE International Integrated Reliability Workshop, IIRW 2023 ; Conference date: 08-10-2023 Through 12-10-2023",

year = "2023",

doi = "10.1109/IIRW59383.2023.10477708",

language = "English (US)",

series = "IEEE International Integrated Reliability Workshop Final Report",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

booktitle = "2023 IEEE International Integrated Reliability Workshop, IIRW 2023",

address = "United States",

}

Allridge, EA & Lenahan, PM 2023, On The Absolute Sensitivity of Near-Zero Field Magnetoresistance for Device Reliability Studies. in 2023 IEEE International Integrated Reliability Workshop, IIRW 2023. IEEE International Integrated Reliability Workshop Final Report, Institute of Electrical and Electronics Engineers Inc., 2023 IEEE International Integrated Reliability Workshop, IIRW 2023, South Lake Tahoe, United States, 10/8/23. https://doi.org/10.1109/IIRW59383.2023.10477708

On The Absolute Sensitivity of Near-Zero Field Magnetoresistance for Device Reliability Studies. / Allridge, Elijah A.; Lenahan, Patrick M.
2023 IEEE International Integrated Reliability Workshop, IIRW 2023. Institute of Electrical and Electronics Engineers Inc., 2023. (IEEE International Integrated Reliability Workshop Final Report).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

TY - GEN

T1 - On The Absolute Sensitivity of Near-Zero Field Magnetoresistance for Device Reliability Studies

AU - Allridge, Elijah A.

AU - Lenahan, Patrick M.

PY - 2023

Y1 - 2023

N2 - We report on the absolute sensitivity of a new semiconductor device reliability technique, near-zero field magnetoresistance. There has been fairly substantial effort in developing this tool for the analysis of defect structures, but the absolute sensitivity of the technique has yet to been explored. The primary goal of this study is to find an absolute sensitivity value, as well as to determine the spectrometer parameters for achieving this maximum sensitivity. Using the dc I-V biasing scheme on Si/SiO2 MOSFET arrays, we show that this technique is more sensitive and easier to perform than its sister technique, electrically detected magnetic resonance. We find that the absolute sensitivity is fewer than 1,000 defects, and we hypothesize that future efforts could allow for the technique to achieve sensitivity to fewer than 100 defects.

AB - We report on the absolute sensitivity of a new semiconductor device reliability technique, near-zero field magnetoresistance. There has been fairly substantial effort in developing this tool for the analysis of defect structures, but the absolute sensitivity of the technique has yet to been explored. The primary goal of this study is to find an absolute sensitivity value, as well as to determine the spectrometer parameters for achieving this maximum sensitivity. Using the dc I-V biasing scheme on Si/SiO2 MOSFET arrays, we show that this technique is more sensitive and easier to perform than its sister technique, electrically detected magnetic resonance. We find that the absolute sensitivity is fewer than 1,000 defects, and we hypothesize that future efforts could allow for the technique to achieve sensitivity to fewer than 100 defects.

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DO - 10.1109/IIRW59383.2023.10477708

M3 - Conference contribution

AN - SCOPUS:85190365809

T3 - IEEE International Integrated Reliability Workshop Final Report

BT - 2023 IEEE International Integrated Reliability Workshop, IIRW 2023

PB - Institute of Electrical and Electronics Engineers Inc.

T2 - 2023 IEEE International Integrated Reliability Workshop, IIRW 2023

Y2 - 8 October 2023 through 12 October 2023

ER -

On The Absolute Sensitivity of Near-Zero Field Magnetoresistance for Device Reliability Studies

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