On the capacitance of metal/high-k dielectric material stack/silicon structures

J. Jiang; O. O. Awadelkarim; D. O. Lee; P. Roman; J. Ruzyllo

doi:10.1016/S0038-1101(02)00167-3

On the capacitance of metal/high-k dielectric material stack/silicon structures

J. Jiang, O. O. Awadelkarim, D. O. Lee, P. Roman, J. Ruzyllo

Research output: Contribution to journal › Article › peer-review

16 Scopus citations

Abstract

The capacitance of metal-insulator-silicon (MIS) capacitors with SrTa₂O₆, ZrSiO₄-based high-permittivity (k) gate dielectric was analyzed. It was found that the accumulation capacitance of MIS structures with high-k gate dielectrics has a strong dependence on the capacitance-voltage measurement temperature and frequency. This was due to the impedance contributions from a low quality interfacial layer between the high-k dielectric and the Si substrate.

Original language	English (US)
Pages (from-to)	1991-1995
Number of pages	5
Journal	Solid-State Electronics
Volume	46
Issue number	11
DOIs	https://doi.org/10.1016/S0038-1101(02)00167-3
State	Published - Nov 2002

All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials
Condensed Matter Physics
Materials Chemistry
Electrical and Electronic Engineering

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10.1016/S0038-1101(02)00167-3

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title = "On the capacitance of metal/high-k dielectric material stack/silicon structures",

abstract = "The capacitance of metal-insulator-silicon (MIS) capacitors with SrTa2O6, ZrSiO4-based high-permittivity (k) gate dielectric was analyzed. It was found that the accumulation capacitance of MIS structures with high-k gate dielectrics has a strong dependence on the capacitance-voltage measurement temperature and frequency. This was due to the impedance contributions from a low quality interfacial layer between the high-k dielectric and the Si substrate.",

author = "J. Jiang and Awadelkarim, {O. O.} and Lee, {D. O.} and P. Roman and J. Ruzyllo",

year = "2002",

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AU - Jiang, J.

AU - Awadelkarim, O. O.

AU - Lee, D. O.

AU - Roman, P.

AU - Ruzyllo, J.

PY - 2002/11

Y1 - 2002/11

N2 - The capacitance of metal-insulator-silicon (MIS) capacitors with SrTa2O6, ZrSiO4-based high-permittivity (k) gate dielectric was analyzed. It was found that the accumulation capacitance of MIS structures with high-k gate dielectrics has a strong dependence on the capacitance-voltage measurement temperature and frequency. This was due to the impedance contributions from a low quality interfacial layer between the high-k dielectric and the Si substrate.

AB - The capacitance of metal-insulator-silicon (MIS) capacitors with SrTa2O6, ZrSiO4-based high-permittivity (k) gate dielectric was analyzed. It was found that the accumulation capacitance of MIS structures with high-k gate dielectrics has a strong dependence on the capacitance-voltage measurement temperature and frequency. This was due to the impedance contributions from a low quality interfacial layer between the high-k dielectric and the Si substrate.

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M3 - Article

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VL - 46

SP - 1991

EP - 1995

JO - Solid-State Electronics

JF - Solid-State Electronics

IS - 11

ER -

On the capacitance of metal/high-k dielectric material stack/silicon structures

Abstract

All Science Journal Classification (ASJC) codes

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