TY - JOUR
T1 - On the importance of bandgap formation in graphene for analog device applications
AU - Das, Saptarshi
AU - Appenzeller, Joerg
N1 - Funding Information:
Manuscript received July 15, 2010; revised January 8, 2011; accepted January 18, 2011. Date of publication January 28, 2011; date of current version September 8, 2011. This work was supported by the Nanotechnology Research Initiative (NRI) through a supplement to the Network for Computational Nanotechnology (NCN), which is supported by the National Science Foundation (NSF) under Grant EEC-0634750. The review of this paper was arranged by Associate Editor L.-E. Wernersson.
PY - 2011/9
Y1 - 2011/9
N2 - We present a study that identifies the ideal bandgap value in graphene devices, e.g., through size quantization in graphene nanoribbons (GNRs), to enable graphene-based high-performance RF applications. When considering a ballistic graphene GNR-LNA, including aspects like stability, gain, power dissipation, and load impedance, our calculations predict a finite bandgap of the order of Eg≈100 meV to be ideally suited. GNR-LNAs with this bandgap, biased at the optimum operating point, are ultrafast (THz) low-noise amplifiers exhibiting performance specs that show considerable advantages over state-of-the-art technologies. The optimum operating point and bandgap range are found by simulating the impact of the bandgap on several device and circuit relevant parameters including transconductance, output resistance, bandwidth, gain, noise figure, and temperature fluctuations. Our findings are believed to be of relevance in particular for graphene-based RF applications.
AB - We present a study that identifies the ideal bandgap value in graphene devices, e.g., through size quantization in graphene nanoribbons (GNRs), to enable graphene-based high-performance RF applications. When considering a ballistic graphene GNR-LNA, including aspects like stability, gain, power dissipation, and load impedance, our calculations predict a finite bandgap of the order of Eg≈100 meV to be ideally suited. GNR-LNAs with this bandgap, biased at the optimum operating point, are ultrafast (THz) low-noise amplifiers exhibiting performance specs that show considerable advantages over state-of-the-art technologies. The optimum operating point and bandgap range are found by simulating the impact of the bandgap on several device and circuit relevant parameters including transconductance, output resistance, bandwidth, gain, noise figure, and temperature fluctuations. Our findings are believed to be of relevance in particular for graphene-based RF applications.
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U2 - 10.1109/TNANO.2011.2109007
DO - 10.1109/TNANO.2011.2109007
M3 - Article
AN - SCOPUS:80052619975
SN - 1536-125X
VL - 10
SP - 1093
EP - 1098
JO - IEEE Transactions on Nanotechnology
JF - IEEE Transactions on Nanotechnology
IS - 5
M1 - 5703130
ER -