On the Role of the Carrier Gas in the Deposition of Cadmium Telluride from Dimethylcadmium and Diethyltellurium or Diisopropyltellurium

D. W. Snyder; P. J. Sides; E. I. Ko

doi:10.1149/1.2221178

On the Role of the Carrier Gas in the Deposition of Cadmium Telluride from Dimethylcadmium and Diethyltellurium or Diisopropyltellurium

D. W. Snyder, P. J. Sides, E. I. Ko

Applied Research Laboratory (ARL)

Research output: Contribution to journal › Article › peer-review

3 Scopus citations

Abstract

Helium and nitrogen were substituted for hydrogen as a carrier gas in the thermally activated organometallic vapor phase epitaxy of cadmium telluride. The deposition rate decreased markedly and the decrease depended on the particular gas (helium or nitrogen), tellurium precursor (diethyltellurium or diisopropyltellurium), and crystal orientation of the cadmium telluride substrate. Deposition ceased entirely when helium or nitrogen was substituted for hydrogen, the alkyl was diethyltellurium, and the crystal orientation was (111) cd.

Original language	English (US)
Pages (from-to)	L66-L67
Journal	Journal of the Electrochemical Society
Volume	139
Issue number	7
DOIs	https://doi.org/10.1149/1.2221178
State	Published - Jul 1992

All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials
Condensed Matter Physics
Materials Chemistry
Surfaces, Coatings and Films
Electrochemistry
Renewable Energy, Sustainability and the Environment

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10.1149/1.2221178

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abstract = "Helium and nitrogen were substituted for hydrogen as a carrier gas in the thermally activated organometallic vapor phase epitaxy of cadmium telluride. The deposition rate decreased markedly and the decrease depended on the particular gas (helium or nitrogen), tellurium precursor (diethyltellurium or diisopropyltellurium), and crystal orientation of the cadmium telluride substrate. Deposition ceased entirely when helium or nitrogen was substituted for hydrogen, the alkyl was diethyltellurium, and the crystal orientation was (111) cd.",

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year = "1992",

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AU - Sides, P. J.

AU - Ko, E. I.

PY - 1992/7

Y1 - 1992/7

N2 - Helium and nitrogen were substituted for hydrogen as a carrier gas in the thermally activated organometallic vapor phase epitaxy of cadmium telluride. The deposition rate decreased markedly and the decrease depended on the particular gas (helium or nitrogen), tellurium precursor (diethyltellurium or diisopropyltellurium), and crystal orientation of the cadmium telluride substrate. Deposition ceased entirely when helium or nitrogen was substituted for hydrogen, the alkyl was diethyltellurium, and the crystal orientation was (111) cd.

AB - Helium and nitrogen were substituted for hydrogen as a carrier gas in the thermally activated organometallic vapor phase epitaxy of cadmium telluride. The deposition rate decreased markedly and the decrease depended on the particular gas (helium or nitrogen), tellurium precursor (diethyltellurium or diisopropyltellurium), and crystal orientation of the cadmium telluride substrate. Deposition ceased entirely when helium or nitrogen was substituted for hydrogen, the alkyl was diethyltellurium, and the crystal orientation was (111) cd.

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On the Role of the Carrier Gas in the Deposition of Cadmium Telluride from Dimethylcadmium and Diethyltellurium or Diisopropyltellurium

Abstract

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