On the Write Schemes and Efficiency of FeFET 1T NOR Array for Embedded Nonvolatile Memory and Beyond

Yi Xiao, Yixin Xu, Zhouhang Jiang, Shan Deng, Zijian Zhao, Antik Mallick, Limeng Sun, Rajiv Joshi, Xueqing Li, Nikhil Shukla, Vijaykrishnan Narayanan, Kai Ni

Research output: Chapter in Book/Report/Conference proceedingConference contribution

6 Scopus citations

Abstract

Ferroelectric field-effect-transistor (FeFET) 1T NOR Array is promising for multiple applications yet not well studied on its write mechanism and schemes. In this work, we demonstrate: i) A comprehensive model which reflects two FeFET write mechanisms - one to ground Source (S), Drain (D) & Body (B) nodes and use Gate (G) to write, and the other to float S/D and use G & B to write; ii) 3 write schemes for conventional FeFET 1T NOR arrays and another one for the diagonal array, the latter of which shows the advantages of low write energy and high write efficiency but with the penalty area cost; iii) A study of parasitic parameters, particularly gate resistance (Rg), gate capacitance (Cg) and word line resistance (RWL), in FeFET 1T NOR array, which is critical for further prospective 1T NOR array design; iv) An implementation of FeFET 1T NOR array in the Ising machine system to evaluate the feasibility of our write scheme and array structure for embedded nonvolatile memory (NVM) applications.

Original languageEnglish (US)
Title of host publication2022 International Electron Devices Meeting, IEDM 2022
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages1361-1364
Number of pages4
ISBN (Electronic)9781665489591
DOIs
StatePublished - 2022
Event2022 International Electron Devices Meeting, IEDM 2022 - San Francisco, United States
Duration: Dec 3 2022Dec 7 2022

Publication series

NameTechnical Digest - International Electron Devices Meeting, IEDM
Volume2022-December
ISSN (Print)0163-1918

Conference

Conference2022 International Electron Devices Meeting, IEDM 2022
Country/TerritoryUnited States
CitySan Francisco
Period12/3/2212/7/22

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Materials Chemistry
  • Electrical and Electronic Engineering

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