TY - JOUR
T1 - One-Dimensional van der Waals Heterojunction Diode
AU - Feng, Ya
AU - Li, Henan
AU - Inoue, Taiki
AU - Chiashi, Shohei
AU - Rotkin, Slava V.
AU - Xiang, Rong
AU - Maruyama, Shigeo
N1 - Publisher Copyright:
©
PY - 2021/3/23
Y1 - 2021/3/23
N2 - The synthesis of one-dimensional van der Waals heterostructures was realized recently, which offers alternative possibilities for prospective applications in electronics and optoelectronics. The even reduced dimension will enable different properties and further miniaturization beyond the capabilities of their two-dimensional counterparts. The natural doping results in p-type electrical characteristics for semiconducting single-walled carbon nanotubes and n-type for molybdenum disulfide with conventional noble metal contacts. Therefore, we demonstrate here a one-dimensional heterostructure nanotube, 11 nm wide, with the coaxial assembly of a semiconducting single-walled carbon nanotube, insulating boron nitride nanotube, and semiconducting molybdenum disulfide nanotube, which induces a radial semiconductor-insulator-semiconductor heterojunction. When opposite potential polarity was applied on a semiconducting single-walled carbon nanotube and molybdenum disulfide nanotube, respectively, the rectifying effect was materialized.
AB - The synthesis of one-dimensional van der Waals heterostructures was realized recently, which offers alternative possibilities for prospective applications in electronics and optoelectronics. The even reduced dimension will enable different properties and further miniaturization beyond the capabilities of their two-dimensional counterparts. The natural doping results in p-type electrical characteristics for semiconducting single-walled carbon nanotubes and n-type for molybdenum disulfide with conventional noble metal contacts. Therefore, we demonstrate here a one-dimensional heterostructure nanotube, 11 nm wide, with the coaxial assembly of a semiconducting single-walled carbon nanotube, insulating boron nitride nanotube, and semiconducting molybdenum disulfide nanotube, which induces a radial semiconductor-insulator-semiconductor heterojunction. When opposite potential polarity was applied on a semiconducting single-walled carbon nanotube and molybdenum disulfide nanotube, respectively, the rectifying effect was materialized.
UR - http://www.scopus.com/inward/record.url?scp=85103413005&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=85103413005&partnerID=8YFLogxK
U2 - 10.1021/acsnano.1c00657
DO - 10.1021/acsnano.1c00657
M3 - Article
C2 - 33646761
AN - SCOPUS:85103413005
SN - 1936-0851
VL - 15
SP - 5600
EP - 5609
JO - ACS nano
JF - ACS nano
IS - 3
ER -