Abstract
We have examined the optical absorption and spin-resonance signal characteristics of thin layers of silicon damaged by an abrasive process at room temperature. We find an Urbach-like dependence of the subgap absorption and a g=2.0055 isotropic spin-resonance signal characteristic of silicon dangling bonds. Changes in the optical and spin-resonance data caused by thermal anneals in air, or in atomic hydrogen, indicate that direct electronic transitions of the dangling bond defect are not responsible for the observed optical-absorption spectra. The doping level dependence of these spectra is consistent with the hypothesis that electronic transitions arising from disorder-induced band-tail states cause the subgap absorption.
Original language | English (US) |
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Pages (from-to) | 2709-2712 |
Number of pages | 4 |
Journal | Journal of Applied Physics |
Volume | 58 |
Issue number | 7 |
DOIs | |
State | Published - 1985 |
All Science Journal Classification (ASJC) codes
- General Physics and Astronomy