Optical and thermal performance advantages for silicon substrates in ybco bolometer devices

D. B. Fenner, Qi Li, W. D. Hamblen, M. E. Johansson, D. G. Hamblen, L. Lynds, J. I. Budnick

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20 Scopus citations


We review recent progress we have made in the fabrication of epitaxial YBCO thin-film bolometers (photothermal infrared detectors) on Si wafers. IR transmission of the Si substrates, YSZ buffer layers on Si, and YBCO/YSZ/Si have been measured from the near (A/-1 urn) to the far IR (-500 pm) at low temperatures. These show Si to be very superior to other available choices of substrate for epitaxial-YBCO film bolometers. We also show, by various wafer fabrications, that the high strength and thermal conductivity of Si can be exploited to considerably reduce the device thermal-equilibration time, when irradiated with weak IR pulses, and concomitantly increase the device sensitivity. Further, we have fabricated monolithic quad arrays of bolometers, and find excellent element-to-element uniformity in their transitions and in their function as detectors for Fourier-Transform IR (FTTR) spectroscopy. We have also recently fabricated an epitaxial YBCO-film bolometer on a submicron-thick window in a Si wafer, the first such device known, to us. The rise and fall times (10-90%) were less than 500 us, under chopped IR illumination.

Original languageEnglish (US)
Pages (from-to)2104-2106
Number of pages3
JournalIEEE Transactions on Applied Superconductivity
Issue number1
StatePublished - Mar 1993

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering


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