Optical characterization of 4H-SiC by far ultraviolet spectroscopic ellipsometry

Seung Gu Lim, Thomas N. Jackson, W. C. Mitchel, R. Bertke, J. L. Freeouf

Research output: Contribution to journalArticlepeer-review

3 Scopus citations


We have developed a far UV spectroscopic ellipsometer system working up to 9 eV, and applied it to the characterization of three 4H-SiC samples with different surface conditions [i.e., as-received and chemical mechanical processing (CMP) processed 4H-SiC bulk substrates and a 4H-SiC epi sample]. Pseudodielectric functions ε1 and ε2 clearly demonstrate the excellent surface sensitivity of the far UV ellipsometry system as it distinguishes the improvements provided by CMP process. Simulation results of ellipsometer data indicate the existence of a damaged subsurface layer in the as-received 4H-SiC bulk substrate. The investigation of sample surfaces using atomic force microscopy confirms the results of ellipsometry measurements.

Original languageEnglish (US)
Pages (from-to)162-164
Number of pages3
JournalApplied Physics Letters
Issue number2
StatePublished - Jul 9 2001

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy (miscellaneous)


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