Abstract
Bi2Se3 is a topological insulator with unique optical properties, including linearlydispersing surface states. Many of the proposed device applications for Bi2Se3 require a lattice-matched trivially-insulating component. It is known that (Bi1-xInx)2Se3 is a trivial band insulator for moderate indium concentrations. In this paper, we grow and characterize the optical properties of (Bi1-xInx)2Se3 films with varying indium concentrations. We find that the lattice constant and optical bandgap for (Bi1-xInx)2Se3 varies linearly with concentration. We perform infrared reflection measurements as a function of polarization and angle, enabling us to model the permittivity for these materials. Again, we find that most parameters vary linearly with concentration. Our results for the pure end members are consistent with the literature values. This is the first report of optical values for the intermediate compounds, which are likely to be integral components of future topological insulator optical devices.
| Original language | English (US) |
|---|---|
| Pages (from-to) | 2570-2578 |
| Number of pages | 9 |
| Journal | Optical Materials Express |
| Volume | 8 |
| Issue number | 9 |
| DOIs | |
| State | Published - 2018 |
All Science Journal Classification (ASJC) codes
- Electronic, Optical and Magnetic Materials
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