Optical properties of sputtered SnS thin films for photovoltaic absorbers

Rona E. Banai, Hyeonseok Lee, Michael A. Motyka, Ramprasad Chandrasekharan, Nikolas J. Podraza, Jeffrey R.S. Brownson, Mark W. Horn

Research output: Contribution to journalArticlepeer-review

47 Scopus citations


Tin monusulfide (SnS) is an absorber with promising optoelectronic properties and low environmental constraints of interest for high-efficiency solar cells. The optical properties of SnS thin films are investigated to assess their compatibility with the solar spectrum. SnS thin films were RF magnetron sputter-deposited at target powers of 105-155 W and total pressures of 5 to 60 mtorr in argon at room temperature. X-ray diffraction patterns confirmed a dominant tin monosulfide herzenbergite phase. The absorption coefficient was determined by spectroscopic ellipsometry and unpolarized spectrophotometry measurements. Both methods show that the films have absorption coefficients above the band gap in the range of 105-106 cm -1. The direct gap, indirect gap, and forbidden direct gap for the films were found to be in the range of 1.2-1.6 eV, indicating a strong match with the solar irradiance spectrum.

Original languageEnglish (US)
Article number6484868
Pages (from-to)1084-1089
Number of pages6
JournalIEEE Journal of Photovoltaics
Issue number3
StatePublished - 2013

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering


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