Optical properties of sputtered SnS thin films for photovoltaic absorbers

Rona E. Banai; Hyeonseok Lee; Michael A. Motyka; Ramprasad Chandrasekharan; Nikolas J. Podraza; Jeffrey R.S. Brownson; Mark W. Horn

doi:10.1109/JPHOTOV.2013.2251758

Optical properties of sputtered SnS thin films for photovoltaic absorbers

Rona E. Banai, Hyeonseok Lee, Michael A. Motyka, Ramprasad Chandrasekharan, Nikolas J. Podraza, Jeffrey R.S. Brownson, Mark W. Horn

Research output: Contribution to journal › Article › peer-review

47 Scopus citations

Abstract

Tin monusulfide (SnS) is an absorber with promising optoelectronic properties and low environmental constraints of interest for high-efficiency solar cells. The optical properties of SnS thin films are investigated to assess their compatibility with the solar spectrum. SnS thin films were RF magnetron sputter-deposited at target powers of 105-155 W and total pressures of 5 to 60 mtorr in argon at room temperature. X-ray diffraction patterns confirmed a dominant tin monosulfide herzenbergite phase. The absorption coefficient was determined by spectroscopic ellipsometry and unpolarized spectrophotometry measurements. Both methods show that the films have absorption coefficients above the band gap in the range of 10⁵-10⁶ cm ^-1. The direct gap, indirect gap, and forbidden direct gap for the films were found to be in the range of 1.2-1.6 eV, indicating a strong match with the solar irradiance spectrum.

Original language	English (US)
Article number	6484868
Pages (from-to)	1084-1089
Number of pages	6
Journal	IEEE Journal of Photovoltaics
Volume	3
Issue number	3
DOIs	https://doi.org/10.1109/JPHOTOV.2013.2251758
State	Published - 2013

All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials
Condensed Matter Physics
Electrical and Electronic Engineering

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This output contributes to the following UN Sustainable Development Goals (SDGs)

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10.1109/JPHOTOV.2013.2251758

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title = "Optical properties of sputtered SnS thin films for photovoltaic absorbers",

abstract = "Tin monusulfide (SnS) is an absorber with promising optoelectronic properties and low environmental constraints of interest for high-efficiency solar cells. The optical properties of SnS thin films are investigated to assess their compatibility with the solar spectrum. SnS thin films were RF magnetron sputter-deposited at target powers of 105-155 W and total pressures of 5 to 60 mtorr in argon at room temperature. X-ray diffraction patterns confirmed a dominant tin monosulfide herzenbergite phase. The absorption coefficient was determined by spectroscopic ellipsometry and unpolarized spectrophotometry measurements. Both methods show that the films have absorption coefficients above the band gap in the range of 105-106 cm -1. The direct gap, indirect gap, and forbidden direct gap for the films were found to be in the range of 1.2-1.6 eV, indicating a strong match with the solar irradiance spectrum.",

author = "Banai, {Rona E.} and Hyeonseok Lee and Motyka, {Michael A.} and Ramprasad Chandrasekharan and Podraza, {Nikolas J.} and Brownson, {Jeffrey R.S.} and Horn, {Mark W.}",

year = "2013",

doi = "10.1109/JPHOTOV.2013.2251758",

language = "English (US)",

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T1 - Optical properties of sputtered SnS thin films for photovoltaic absorbers

AU - Banai, Rona E.

AU - Lee, Hyeonseok

AU - Motyka, Michael A.

AU - Chandrasekharan, Ramprasad

AU - Podraza, Nikolas J.

AU - Brownson, Jeffrey R.S.

AU - Horn, Mark W.

PY - 2013

Y1 - 2013

N2 - Tin monusulfide (SnS) is an absorber with promising optoelectronic properties and low environmental constraints of interest for high-efficiency solar cells. The optical properties of SnS thin films are investigated to assess their compatibility with the solar spectrum. SnS thin films were RF magnetron sputter-deposited at target powers of 105-155 W and total pressures of 5 to 60 mtorr in argon at room temperature. X-ray diffraction patterns confirmed a dominant tin monosulfide herzenbergite phase. The absorption coefficient was determined by spectroscopic ellipsometry and unpolarized spectrophotometry measurements. Both methods show that the films have absorption coefficients above the band gap in the range of 105-106 cm -1. The direct gap, indirect gap, and forbidden direct gap for the films were found to be in the range of 1.2-1.6 eV, indicating a strong match with the solar irradiance spectrum.

AB - Tin monusulfide (SnS) is an absorber with promising optoelectronic properties and low environmental constraints of interest for high-efficiency solar cells. The optical properties of SnS thin films are investigated to assess their compatibility with the solar spectrum. SnS thin films were RF magnetron sputter-deposited at target powers of 105-155 W and total pressures of 5 to 60 mtorr in argon at room temperature. X-ray diffraction patterns confirmed a dominant tin monosulfide herzenbergite phase. The absorption coefficient was determined by spectroscopic ellipsometry and unpolarized spectrophotometry measurements. Both methods show that the films have absorption coefficients above the band gap in the range of 105-106 cm -1. The direct gap, indirect gap, and forbidden direct gap for the films were found to be in the range of 1.2-1.6 eV, indicating a strong match with the solar irradiance spectrum.

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Optical properties of sputtered SnS thin films for photovoltaic absorbers

Abstract

All Science Journal Classification (ASJC) codes

UN SDGs

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