Optical properties of Zn0.5Cd0.5Se thin films grown on InP by molecular beam epitaxy

O. Maksimov; W. H. Wang; N. Samarth; Martin Muñoz; M. C. Tamargo

doi:10.1016/j.ssc.2003.08.011

Optical properties of Zn_0.5Cd_0.5Se thin films grown on InP by molecular beam epitaxy

O. Maksimov
, W. H. Wang
, N. Samarth
, Martin Muñoz
, M. C. Tamargo

Physics

Research output: Contribution to journal › Article › peer-review

11 Scopus citations

Abstract

We report photoluminescence (PL) and reflectivity measurements of Zn _0.5Cd_0.5Se epilayers grown by molecular beam epitaxy on InP substrates. The low-temperature PL spectra are dominated by asymmetric lines, which can be deconvoluted into two Gaussian peaks with a separation of ∼8 meV. The behavior of these peaks is studied as a function of excitation intensity and temperature, revealing that these are free exciton (FE) and bound exciton emission lines. Two lower energy emission lines are also observed and assigned to the first and second longitudinal optical phonon replicas of the FE emission. The temperature dependence of the intensity, line width, and energy of the dominant emission lines are described by an Arrhenius plot, a Bose-Einstein type relationship, Varshni's and Bose-Einstein equations, respectively.

Original language	English (US)
Pages (from-to)	461-466
Number of pages	6
Journal	Solid State Communications
Volume	128
Issue number	12
DOIs	https://doi.org/10.1016/j.ssc.2003.08.011
State	Published - Dec 2003

All Science Journal Classification (ASJC) codes

General Chemistry
Condensed Matter Physics
Materials Chemistry

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10.1016/j.ssc.2003.08.011

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title = "Optical properties of Zn0.5Cd0.5Se thin films grown on InP by molecular beam epitaxy",

abstract = "We report photoluminescence (PL) and reflectivity measurements of Zn 0.5Cd0.5Se epilayers grown by molecular beam epitaxy on InP substrates. The low-temperature PL spectra are dominated by asymmetric lines, which can be deconvoluted into two Gaussian peaks with a separation of ∼8 meV. The behavior of these peaks is studied as a function of excitation intensity and temperature, revealing that these are free exciton (FE) and bound exciton emission lines. Two lower energy emission lines are also observed and assigned to the first and second longitudinal optical phonon replicas of the FE emission. The temperature dependence of the intensity, line width, and energy of the dominant emission lines are described by an Arrhenius plot, a Bose-Einstein type relationship, Varshni's and Bose-Einstein equations, respectively.",

author = "O. Maksimov and Wang, \{W. H.\} and N. Samarth and Martin Mu{\~n}oz and Tamargo, \{M. C.\}",

year = "2003",

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language = "English (US)",

volume = "128",

pages = "461--466",

journal = "Solid State Communications",

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TY - JOUR

T1 - Optical properties of Zn0.5Cd0.5Se thin films grown on InP by molecular beam epitaxy

AU - Maksimov, O.

AU - Wang, W. H.

AU - Samarth, N.

AU - Muñoz, Martin

AU - Tamargo, M. C.

PY - 2003/12

Y1 - 2003/12

N2 - We report photoluminescence (PL) and reflectivity measurements of Zn 0.5Cd0.5Se epilayers grown by molecular beam epitaxy on InP substrates. The low-temperature PL spectra are dominated by asymmetric lines, which can be deconvoluted into two Gaussian peaks with a separation of ∼8 meV. The behavior of these peaks is studied as a function of excitation intensity and temperature, revealing that these are free exciton (FE) and bound exciton emission lines. Two lower energy emission lines are also observed and assigned to the first and second longitudinal optical phonon replicas of the FE emission. The temperature dependence of the intensity, line width, and energy of the dominant emission lines are described by an Arrhenius plot, a Bose-Einstein type relationship, Varshni's and Bose-Einstein equations, respectively.

AB - We report photoluminescence (PL) and reflectivity measurements of Zn 0.5Cd0.5Se epilayers grown by molecular beam epitaxy on InP substrates. The low-temperature PL spectra are dominated by asymmetric lines, which can be deconvoluted into two Gaussian peaks with a separation of ∼8 meV. The behavior of these peaks is studied as a function of excitation intensity and temperature, revealing that these are free exciton (FE) and bound exciton emission lines. Two lower energy emission lines are also observed and assigned to the first and second longitudinal optical phonon replicas of the FE emission. The temperature dependence of the intensity, line width, and energy of the dominant emission lines are described by an Arrhenius plot, a Bose-Einstein type relationship, Varshni's and Bose-Einstein equations, respectively.

UR - https://www.scopus.com/pages/publications/0142153898

UR - https://www.scopus.com/pages/publications/0142153898#tab=citedBy

U2 - 10.1016/j.ssc.2003.08.011

DO - 10.1016/j.ssc.2003.08.011

M3 - Article

AN - SCOPUS:0142153898

SN - 0038-1098

VL - 128

SP - 461

EP - 466

JO - Solid State Communications

JF - Solid State Communications

IS - 12

ER -

Optical properties of Zn_0.5Cd_0.5Se thin films grown on InP by molecular beam epitaxy

Abstract

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