Optical spectroscopy of II-VI (magnetic) semiconductor quantum dots

P. A. Crowell; V. Nikitin; J. A. Gupta; D. D. Awschalom; F. Flack; N. Samarth

doi:10.1016/S1386-9477(98)00174-X

Optical spectroscopy of II-VI (magnetic) semiconductor quantum dots

P. A. Crowell, V. Nikitin, J. A. Gupta, D. D. Awschalom, F. Flack, N. Samarth

Research output: Contribution to journal › Article › peer-review

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Abstract

We have probed the magnetooptical properties of II-VI semiconductor quantum dots at low temperatures (T = 5 K) in magnetic fields up to 6 T. A layer of coherently strained CdSe dots of diameters 5-20 nm is introduced into heterostructures containing either a Zn_0.8Cd_0.2Se quantum well or a barrier layer of MnSe. In the quantum well structure, carriers are localized in strain fields due to the nearby quantum dot layer. The effective g-factors g* of excitons in the localized states are ∼-1.5. In contrast, g* ∼ 6-7 for carriers localized in CdSe islands coupled to an adjacent MnSe barrier. The enhancement of the g-factor in this case is due to the overlap of the tails of the localized wave functions with Mn⁺⁺ ions in the barrier.

Original language	English (US)
Pages (from-to)	854-857
Number of pages	4
Journal	Physica E: Low-Dimensional Systems and Nanostructures
Volume	2
Issue number	1-4
DOIs	https://doi.org/10.1016/S1386-9477(98)00174-X
State	Published - Jul 15 1998

All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials
Atomic and Molecular Physics, and Optics
Condensed Matter Physics

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10.1016/S1386-9477(98)00174-X

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title = "Optical spectroscopy of II-VI (magnetic) semiconductor quantum dots",

abstract = "We have probed the magnetooptical properties of II-VI semiconductor quantum dots at low temperatures (T = 5 K) in magnetic fields up to 6 T. A layer of coherently strained CdSe dots of diameters 5-20 nm is introduced into heterostructures containing either a Zn0.8Cd0.2Se quantum well or a barrier layer of MnSe. In the quantum well structure, carriers are localized in strain fields due to the nearby quantum dot layer. The effective g-factors g* of excitons in the localized states are ∼-1.5. In contrast, g* ∼ 6-7 for carriers localized in CdSe islands coupled to an adjacent MnSe barrier. The enhancement of the g-factor in this case is due to the overlap of the tails of the localized wave functions with Mn++ ions in the barrier.",

author = "Crowell, {P. A.} and V. Nikitin and Gupta, {J. A.} and Awschalom, {D. D.} and F. Flack and N. Samarth",

note = "Funding Information: This work was supported by grants AFOSR F49620-96-1-0018, ONR N00014-94-1-0225 and -0297, ARO-DAAH04-95-1-0202, and the NSF Science and Technology Center for Quantized Electronic Structures (DMR 91-20007).",

year = "1998",

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doi = "10.1016/S1386-9477(98)00174-X",

language = "English (US)",

volume = "2",

pages = "854--857",

journal = "Physica E: Low-Dimensional Systems and Nanostructures",

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publisher = "Elsevier B.V.",

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TY - JOUR

T1 - Optical spectroscopy of II-VI (magnetic) semiconductor quantum dots

AU - Crowell, P. A.

AU - Nikitin, V.

AU - Gupta, J. A.

AU - Awschalom, D. D.

AU - Flack, F.

AU - Samarth, N.

N1 - Funding Information: This work was supported by grants AFOSR F49620-96-1-0018, ONR N00014-94-1-0225 and -0297, ARO-DAAH04-95-1-0202, and the NSF Science and Technology Center for Quantized Electronic Structures (DMR 91-20007).

PY - 1998/7/15

Y1 - 1998/7/15

N2 - We have probed the magnetooptical properties of II-VI semiconductor quantum dots at low temperatures (T = 5 K) in magnetic fields up to 6 T. A layer of coherently strained CdSe dots of diameters 5-20 nm is introduced into heterostructures containing either a Zn0.8Cd0.2Se quantum well or a barrier layer of MnSe. In the quantum well structure, carriers are localized in strain fields due to the nearby quantum dot layer. The effective g-factors g* of excitons in the localized states are ∼-1.5. In contrast, g* ∼ 6-7 for carriers localized in CdSe islands coupled to an adjacent MnSe barrier. The enhancement of the g-factor in this case is due to the overlap of the tails of the localized wave functions with Mn++ ions in the barrier.

AB - We have probed the magnetooptical properties of II-VI semiconductor quantum dots at low temperatures (T = 5 K) in magnetic fields up to 6 T. A layer of coherently strained CdSe dots of diameters 5-20 nm is introduced into heterostructures containing either a Zn0.8Cd0.2Se quantum well or a barrier layer of MnSe. In the quantum well structure, carriers are localized in strain fields due to the nearby quantum dot layer. The effective g-factors g* of excitons in the localized states are ∼-1.5. In contrast, g* ∼ 6-7 for carriers localized in CdSe islands coupled to an adjacent MnSe barrier. The enhancement of the g-factor in this case is due to the overlap of the tails of the localized wave functions with Mn++ ions in the barrier.

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SN - 1386-9477

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EP - 857

JO - Physica E: Low-Dimensional Systems and Nanostructures

JF - Physica E: Low-Dimensional Systems and Nanostructures

IS - 1-4

ER -

Optical spectroscopy of II-VI (magnetic) semiconductor quantum dots

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